Physical and Materials Chemistry Division, CSIR-National Chemical Laboratory, CSIR-Network of Institutes for Solar Energy , Dr. Homi Bhabha Road, Pune 411008, India.
Academy of Scientific and Innovative Research (AcSIR) , New Delhi 110025, India.
J Org Chem. 2017 Feb 17;82(4):1920-1930. doi: 10.1021/acs.joc.6b02670. Epub 2017 Feb 8.
Metal-free near-infrared (NIR) active unsymmetrical squaraine dyes, RSQ1 and RSQ2, with benzodithiophene (BDT) π-spacer and cyanoacrylic acid acceptor were synthesized by utilizing palladium catalyzed direct (hetero)arylation reaction. Methyl and 2-ethylhexyl groups were strategically placed at the BDT unit for RSQ1 and RSQ2, respectively, to investigate the effect of alkylated π-spacer on dye aggregation on the TiO surface and recombination reactions at TiO/dye/electrolyte interface. These dyes have strong absorption (ε > 10 M cm) in near-infrared (NIR) region and exhibit similar optical and electrochemical properties as they have same conjugated framework. RSQ2 performed better than RSQ1 owing to its higher open-circuit voltage (V) and fill factor (ff) in spite of having comparable short-circuit current density (J). The panchromatic incident photon-to-current conversion efficiency (IPCE) response was also observed for both the dyes. RSQ2 showed power conversion efficiency (PCE) of 6.72% with short-circuit current density (J) of 18.53 mA/cm, open circuit voltage (V) of 0.538 V, and fill factor (ff) of 67.4%, without any coadsorbent. Attenuation of the charge recombination for RSQ2 was revealed by electrochemical impedance analysis (EIS) and open-circuit potential decay transients (OCVD), which attributes to its higher V and ff in comparison to RSQ1.
无金属近红外(NIR)活性非对称方酸染料 RSQ1 和 RSQ2 采用钯催化直接(杂)芳基化反应合成,具有苯并二噻吩(BDT)π-间隔基和氰基丙烯酸受体。RSQ1 和 RSQ2 中的 BDT 单元分别采用甲基和 2-乙基己基进行了烷基化,以研究烷基化 π-间隔基对 TiO 表面上染料聚集和 TiO/染料/电解质界面上复合反应的影响。这些染料在近红外(NIR)区域具有强吸收(ε>10 M cm),并且具有相同的共轭框架,因此具有相似的光学和电化学性质。尽管具有可比的短路电流密度(J),但 RSQ2 的开路电压(V)和填充因子(ff)更高,因此性能优于 RSQ1。两种染料都观察到全光谱入射光子电流转换效率(IPCE)响应。RSQ2 在没有任何共吸附剂的情况下,表现出 6.72%的功率转换效率(PCE),短路电流密度(J)为 18.53 mA/cm,开路电压(V)为 0.538 V,填充因子(ff)为 67.4%。电化学阻抗分析(EIS)和开路电位衰减瞬变(OCVD)揭示了 RSQ2 中电荷复合的衰减,这归因于其与 RSQ1 相比具有更高的 V 和 ff。