Chen Teng, Wang Xu, Liu Yang, Li Baoyin, Cheng Zheng, Wang Zaoming, Lai Wenchuan, Liu Xiangyang
College of Polymer Science and Engineering, State Key Laboratory of Polymer Material and Engineering, Sichuan University, Chengdu 610065, People's Republic of China.
Phys Chem Chem Phys. 2017 Feb 15;19(7):5504-5512. doi: 10.1039/c6cp07665c.
A facile way to prepare fluorinated graphene (FG) with a high fluorine content and controllable structure is important to achieve its full potential application. In this work, it was found that the fluorine to carbon (F/C) ratio of fluorinated graphene oxide (FGO) was nearly twice as much as that of fluorinated chemically reduced graphene oxide (FCrGO) after fluorination at the same temperature. Concerning the detailed effects of oxygenic groups on the fluorination and structure of fluorinated graphene (FG), graphene oxides with different oxygen contents were fluorinated under the same conditions. It was shown that oxygenic groups promote the fluorination reaction by activating the surrounding aromatic regions and taking part in the substitution reaction with fluorine radicals, among which, hydroxyls and carbonyls tend to be replaced by fluorine atoms. Moreover, the fluorination mainly occurs at the edges and defects of graphene sheets with a low oxygen content, while the highly oxidized graphene sheets are fluorinated both at the edges and basal planes simultaneously. This indicates that the quantity and location of the C-F bonds in FGO can be controlled by adjusting the species and content of oxygenic groups in the precursor graphene oxide.
制备具有高氟含量和可控结构的氟化石墨烯(FG)的简便方法对于实现其全部潜在应用至关重要。在这项工作中,发现相同温度下氟化后,氟化氧化石墨烯(FGO)的氟碳(F/C)比几乎是氟化化学还原氧化石墨烯(FCrGO)的两倍。关于含氧基团对氟化石墨烯(FG)氟化和结构的详细影响,在相同条件下对不同含氧量的氧化石墨烯进行了氟化。结果表明,含氧基团通过活化周围的芳香区域并参与与氟自由基的取代反应来促进氟化反应,其中,羟基和羰基容易被氟原子取代。此外,氟化主要发生在含氧量低的石墨烯片的边缘和缺陷处,而高度氧化的石墨烯片在边缘和基面同时发生氟化。这表明可以通过调节前驱体氧化石墨烯中含氧基团的种类和含量来控制FGO中C-F键的数量和位置。