Li Junjie, Yin Deqiang, Li Qiang, Sun Rong, Huang Sumei, Meng Fanzhi
Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, North Zhongshan Road 3663, Shanghai 200062, China.
School of Manufacturing Science and Engineering, Sichuan University, Chengdu 610064, China.
Phys Chem Chem Phys. 2017 Mar 8;19(10):6945-6951. doi: 10.1039/c6cp07691b.
Unravelling the atomic structure and chemical species of interfacial defects is critical to understanding the origin of interfacial properties in many heterojunctions. Here, by combining advanced transmission electron microscopy, spectroscopy and first-principles calculations, we demonstrate interfacial Ti diffusion in SrVO/SrTiO and LaCrO/SrTiO heterointerfaces and uncover that the interfacial defects induce a significant change in electronic properties by showing an electronic transformation from the insulating state to metallic state at SrVO/SrTiO heterointerfaces due to the hybridization of interfacial Ti d, O p and V d, and a metallic to insulating state transformation at LaCrO/SrTiO because of Ti-Cr mixing induced charge redistribution in the interfacial layer.
揭示界面缺陷的原子结构和化学物种对于理解许多异质结中界面性质的起源至关重要。在此,通过结合先进的透射电子显微镜、光谱学和第一性原理计算,我们证明了SrVO/SrTiO和LaCrO/SrTiO异质界面中的界面Ti扩散,并发现界面缺陷通过在SrVO/SrTiO异质界面处由于界面Ti d、O p和V d的杂化而显示出从绝缘态到金属态的电子转变,以及在LaCrO/SrTiO处由于界面层中Ti-Cr混合引起的电荷重新分布而从金属态到绝缘态的转变,从而导致电子性质发生显著变化。