Vicario Carlo, Shalaby Mostafa, Hauri Christoph P
Paul Scherrer Institute, SwissFEL, 5232 Villigen PSI, Switzerland.
Ecole Polytechnique Federale de Lausanne, 1015 Lausanne, Switzerland.
Phys Rev Lett. 2017 Feb 24;118(8):083901. doi: 10.1103/PhysRevLett.118.083901. Epub 2017 Feb 21.
We report on the experimental observation of extreme laser spectral broadening and a change in optical transmission in gallium phosphite induced by 25 MV/cm terahertz (THz) single-cycle internal field. Such intense THz radiation leads to twofold transient modifications of the optical properties in the electro-optical crystal. First, the electric field provokes extensive cross-phase modulation via the χ^{(2)} and χ^{(3)} nonlinearities on a copropagating 50 fs near infrared laser pulse which turns into 500% spectral broadening. Second, we observe an instantaneous change of the optical transmission occurring at the THz field which is alleged to interband Zener tunneling and charge carrier density modification by impact ionization turning the semiconductor in a metal-like transient state. The presented scheme displays a pathway to coherently control the optical properties of semiconductors on an ultrafast time scale by a strong THz field.
我们报道了由25 MV/cm太赫兹(THz)单周期内场诱导的亚磷酸镓中极端激光光谱展宽和光传输变化的实验观测结果。如此强的太赫兹辐射导致电光晶体光学性质的双重瞬态改变。首先,电场通过χ^{(2)}和χ^{(3)}非线性对共传播的50飞秒近红外激光脉冲引发广泛的交叉相位调制,使其光谱展宽达500%。其次,我们观察到在太赫兹场处发生的光传输的瞬时变化,这被认为是带间齐纳隧穿以及通过碰撞电离导致的载流子密度改变,从而使半导体转变为类似金属的瞬态状态。所提出的方案展示了一种通过强太赫兹场在超快时间尺度上相干控制半导体光学性质的途径。