Jiang Qing-Mei, Zhang Miao-Rong, Luo Li-Qiang, Pan Ge-Bo
Department of Chemistry, College of Sciences, Shanghai University, 99 Shangda Road, 200444 Shanghai, PR China; Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123 Suzhou, PR China.
Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123 Suzhou, PR China; University of Chinese Academy of Sciences, 100049 Beijing, PR China.
Talanta. 2017 Aug 15;171:250-254. doi: 10.1016/j.talanta.2017.04.075. Epub 2017 May 1.
Bismuth nanodendrites (BiNDs) were electrodeposited on planar gallium nitride (GaN) electrode via a differential pulse voltammetric technique to fabricate the non-enzymatic hydrogen peroxide (HO) sensor. SEM images revealed that the as-obtained BiNDs had numerous dendrite sub-branches, whose diameters ranged from 136 to 152nm. The BiNDs/GaN electrode showed linear amperometric responses for HO in the concentration range from 10µM to 1mM with the sensitivity of 60.0μAmMcm. Another linear range was from 1 to 10mM with the sensitivity of 23.3μAmMcm. The limit of detection (LOD) was 5µM with the signal-to-noise ratio of 3. The applicability of the sensor was investigated to the HO detection in real samples such as fetal bovine serum and milk, and the sensor exhibited excellent anti-interference capacity. The achieved results indicate that the as-prepared BiNDs/GaN sensor with good reproducibility and long-term stability was promising for detecting HO in practical environments.
通过差分脉冲伏安技术在平面氮化镓(GaN)电极上电沉积铋纳米枝晶(BiNDs),以制备非酶过氧化氢(HO)传感器。扫描电子显微镜(SEM)图像显示,所获得的BiNDs具有许多枝晶亚分支,其直径范围为136至152nm。BiNDs/GaN电极对HO在10µM至1mM的浓度范围内呈现线性安培响应,灵敏度为60.0μAmMcm。另一个线性范围是1至10mM,灵敏度为23.3μAmMcm。检测限(LOD)为5µM,信噪比为3。研究了该传感器在胎牛血清和牛奶等实际样品中对HO检测的适用性,该传感器表现出优异的抗干扰能力。所取得的结果表明,所制备的具有良好重现性和长期稳定性的BiNDs/GaN传感器在实际环境中检测HO具有潜力。