Verma Akarsh, Parashar Avinash
Department of Mechanical and Industrial Engineering, Indian Institute of Technology, Roorkee - 247667, India.
Phys Chem Chem Phys. 2017 Jun 21;19(24):16023-16037. doi: 10.1039/c7cp02366a.
Graphene is emerging as a versatile material with a diverse field of applications. Synthesis techniques for graphene introduce several topological defects such as vacancies, dislocations and Stone-Thrower-Wales (STW) defects. Among them STW defects are generated without deleting any atom from the lattice position, but are introduced by rotating single C-C bonds. In this article, molecular dynamics based simulations have been performed to study the effect of STW defects on the fracture toughness of pristine graphene as well as graphene with crack edges passivated with hydrogen atoms. STW defects help in generating out of plane displacement in conjunction with redistribution of stress around the crack edges that can be used to improve the fracture toughness of brittle graphene. An overall improvement in the fracture toughness of pristine graphene as well as graphene containing hydrogen at the crack edges was predicted in this work.
石墨烯正成为一种具有广泛应用领域的多功能材料。石墨烯的合成技术会引入几种拓扑缺陷,如空位、位错和斯通-威尔士(STW)缺陷。其中,STW缺陷不是通过从晶格位置删除任何原子产生的,而是由单个C-C键的旋转引入的。在本文中,进行了基于分子动力学的模拟,以研究STW缺陷对原始石墨烯以及裂纹边缘用氢原子钝化的石墨烯的断裂韧性的影响。STW缺陷有助于在裂纹边缘周围产生面外位移并伴随应力重新分布,这可用于提高脆性石墨烯的断裂韧性。这项工作预测了原始石墨烯以及裂纹边缘含氢的石墨烯的断裂韧性会有整体提高。