Department of Physics, University of Ottawa, Ottawa, K1N 6N5, Canada.
Department of Theoretical Physics, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, Wroclaw, Poland.
Sci Rep. 2017 Jul 17;7(1):5529. doi: 10.1038/s41598-017-05655-9.
We show here how to create macroscopic quantum states in a semiconductor device: a chain of InAs quantum dots embedded in an InP nanowire. Filling the nanowire with 4 electrons per dot creates a synthetic spin-one chain, with four-fold degenerate topological ground state protected by a Haldane gap. The four states correspond to two spin-½ quasiparticles localised at the ends of the macroscopic wire. The quasiparticle spins are mapped onto a robust, macroscopic, singlet-triplet qubit. These predictions are supported by a microscopic theory and extensive numerical simulations.
将嵌入在 InP 纳米线中的 InAs 量子点链。在每个点填充 4 个电子可创建一个具有合成自旋-1 链，其中四重简并拓扑基态受到 Haldane 能隙的保护。这四个状态对应于宏观线两端的两个自旋-1/2 准粒子。准粒子的自旋被映射到一个稳健的、宏观的、单态-三重态量子位上。这些预测得到了微观理论和广泛的数值模拟的支持。
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