纳米结构金刚石薄膜在硅和Ti-6Al-4V合金基底上的快速生长
Rapid Growth of Nanostructured Diamond Film on Silicon and Ti-6Al-4V Alloy Substrates.
作者信息
Samudrala Gopi K, Vohra Yogesh K, Walock Michael J, Miles Robin
机构信息
Department of Physics, University of Alabama at Birmingham, Birmingham, AL 35294, USA.
Laser Inertial Fusion Energy, Lawrence Livermore National Laboratory, Livermore, CA 94550, USA.
出版信息
Materials (Basel). 2014 Jan 13;7(1):365-374. doi: 10.3390/ma7010365.
Nanostructured diamond (NSD) films were grown on silicon and Ti-6Al-4V alloy substrates by microwave plasma chemical vapor deposition (MPCVD). NSD Growth rates of 5 µm/h on silicon, and 4 µm/h on Ti-6Al-4V were achieved. In a chemistry of H₂/CH₄/N₂, varying ratios of CH₄/H₂ and N₂/CH₄ were employed in this research and their effect on the resulting diamond films were studied by X-ray photoelectron spectroscopy, Raman spectroscopy, scanning electron microscopy, and atomic force microscopy. As a result of modifying the stock cooling stage of CVD system, we were able to utilize plasma with high power densities in our NSD growth experiments, enabling us to achieve high growth rates. Substrate temperature and N₂/CH₄ ratio have been found to be key factors in determining the diamond film quality. NSD films grown as part of this study were shown to contain 85% to 90% sp³ bonded carbon.
通过微波等离子体化学气相沉积（MPCVD）在硅和Ti-6Al-4V合金衬底上生长了纳米结构金刚石（NSD）薄膜。在硅上的NSD生长速率达到5 µm/h，在Ti-6Al-4V上为4 µm/h。在H₂/CH₄/N₂化学体系中，本研究采用了不同的CH₄/H₂和N₂/CH₄比例，并通过X射线光电子能谱、拉曼光谱、扫描电子显微镜和原子力显微镜研究了它们对所得金刚石薄膜的影响。通过改进CVD系统的原料冷却阶段，我们能够在NSD生长实验中利用高功率密度的等离子体，从而实现高生长速率。已发现衬底温度和N₂/CH₄比例是决定金刚石薄膜质量的关键因素。作为本研究一部分生长的NSD薄膜显示含有85%至90%的sp³键合碳。
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