Lungu George A, Apostol Nicoleta G, Stoflea Laura E, Costescu Ruxandra M, Popescu Dana G, Teodorescu Cristian M
National Institute of Materials Physics, Atomistilor 105b, P.O. Box MG-7, Magurele-Ilfov 077125, Romania.
Materials (Basel). 2013 Feb 21;6(2):612-625. doi: 10.3390/ma6020612.
Ferromagnetic FeGe with = 2%-9% are obtained by Fe deposition onto Ge(001) at high temperatures (500 °C). Low energy electron diffraction (LEED) investigation evidenced the preservation of the (1 × 1) surface structure of Ge(001) with Fe deposition. X-ray photoelectron spectroscopy (XPS) at Ge 3d and Fe 2p core levels evidenced strong Fe diffusion into the Ge substrate and formation of Ge-rich compounds, from FeGe₃ to approximately FeGe₂, depending on the amount of Fe deposited. Room temperature magneto-optical Kerr effect (MOKE) evidenced ferromagnetic ordering at room temperature, with about 0.1 Bohr magnetons per Fe atom, and also a clear uniaxial magnetic anisotropy with the in-plane easy magnetization axis. This compound is a good candidate for promising applications in the field of semiconductor spintronics.
通过在高温（500°C）下将铁沉积到Ge(001)上获得铁含量为2% - 9%的铁磁体FeGe。低能电子衍射（LEED）研究表明，随着铁的沉积，Ge(001)的(1×1)表面结构得以保留。对Ge 3d和Fe 2p核心能级进行的X射线光电子能谱（XPS）表明，铁强烈扩散到Ge衬底中，并形成了富含Ge的化合物，从FeGe₃到大约FeGe₂，这取决于铁的沉积量。室温磁光克尔效应（MOKE）表明在室温下存在铁磁有序，每个铁原子约有0.1玻尔磁子，并且还具有明显的面内易磁化轴的单轴磁各向异性。这种化合物是半导体自旋电子学领域中有前景应用的良好候选材料。
