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通过铜酞菁/砷化镓异质结处的混合电荷转移激子实现延迟三线态形成。

Delayed Triplet-State Formation through Hybrid Charge Transfer Exciton at Copper Phthalocyanine/GaAs Heterojunction.

作者信息

Lim Heeseon, Kwon Hyuksang, Kim Sang Kyu, Kim Jeong Won

机构信息

Department of Chemistry, KAIST , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Korea.

Korea Research Institute of Standards and Science , 267 Gajeong-ro, Yuseong-gu, Daejeon 34113, Korea.

出版信息

J Phys Chem Lett. 2017 Oct 5;8(19):4763-4768. doi: 10.1021/acs.jpclett.7b02111. Epub 2017 Sep 19.

Abstract

Light absorption in organic molecules on an inorganic substrate and subsequent electron transfer to the substrate create so-called hybrid charge transfer exciton (HCTE). The relaxation process of the HCTE states largely determines charge separation efficiency or optoelectronic device performance. Here, the study on energy and time-dispersive behavior of photoelectrons at the hybrid interface of copper phthalocyanine (CuPc)/p-GaAs(001) upon light excitation of GaAs reveals a clear pathway for HCTE relaxation and delayed triplet-state formation. According to the ground-state energy level alignment at the interface, CuPc/p-GaAs(001) shows initially fast hole injection from GaAs to CuPc. Thus, the electrons in GaAs and holes in CuPc form an unusual HCTE state manifold. Subsequent electron transfer from GaAs to CuPc generates the formation of the triplet state in CuPc with a few picoseconds delay. Such two-step charge transfer causes delayed triplet-state formation without singlet excitation and subsequent intersystem crossing within the CuPc molecules.

摘要

无机衬底上有机分子中的光吸收以及随后电子向衬底的转移会产生所谓的混合电荷转移激子(HCTE)。HCTE态的弛豫过程在很大程度上决定了电荷分离效率或光电器件性能。在此,对砷化镓光激发下酞菁铜(CuPc)/p-GaAs(001)混合界面处光电子的能量和时间色散行为的研究揭示了HCTE弛豫和延迟三重态形成的清晰途径。根据界面处的基态能级排列,CuPc/p-GaAs(001)最初显示出从GaAs到CuPc的快速空穴注入。因此,GaAs中的电子和CuPc中的空穴形成了一个不寻常的HCTE态多重态。随后从GaAs到CuPc的电子转移会延迟几皮秒生成CuPc中的三重态。这种两步电荷转移导致在没有单重激发以及随后CuPc分子内系间窜越的情况下形成延迟三重态。

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