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溅射生长的高度取向 Bi-Te 薄膜的组成调谐及其光学和电子结构。

Compositional tuning in sputter-grown highly-oriented Bi-Te films and their optical and electronic structures.

机构信息

Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 5, 1-1-1 Higashi, Tsukuba 305-8565, Japan.

出版信息

Nanoscale. 2017 Oct 12;9(39):15115-15121. doi: 10.1039/c7nr04709f.

Abstract

Growth of Bi-Te films by helicon-wave magnetron sputtering is systematically explored using alloy targets. The film compositions obtained are found to strongly depend on both the sputtering and antenna-coil powers. The obtainable film compositions range from BiTe to BiTe when a BiTe alloy target is used, and from BiTe to BiTe (BiTe) for a Te-rich BiTe target. All films show strong orientation of the van der Waals layers (00l planes) parallel to the substrate. The atomic level stacking of BiTe quintuple and Bi bi-layers has been directly observed by high resolution transmission electron microscopy. Band structure simulations reveal that Bi-rich BiTe bulk is a zero band gap semimetal with a Dirac cone at the Gamma point when spin-orbit coupling is included. Optical measurements also confirm that the material has a zero band gap. The tunability of the composition and the topological insulating properties of the layers will enable the use of these materials for future electronics applications on an industrial scale.

摘要

采用螺旋波磁控溅射方法在合金靶材上系统地研究了 Bi-Te 薄膜的生长。研究发现,所获得的薄膜组成强烈依赖于溅射功率和天线线圈功率。当使用 Bi-Te 合金靶材时,可获得从 BiTe 到 BiTe 的薄膜组成,而对于富 Te 的 Bi-Te 靶材,可获得从 BiTe 到 BiTe(BiTe)的薄膜组成。所有薄膜均表现出范德华层(00l 平面)沿衬底平行的强烈取向。通过高分辨率透射电子显微镜直接观察到 BiTe 五重和 Bi 双层的原子层堆积。能带结构模拟表明,当包含自旋轨道耦合时,富 Bi 的 Bi-Te 体是具有狄拉克锥的零带隙半金属,位于Γ点。光学测量也证实了该材料具有零带隙。这种组成可调谐性和层的拓扑绝缘性质将使这些材料能够在未来的工业规模电子应用中得到应用。

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