Institute for Solar Energy Systems, School of Physics, Sun Yat-sen University, Guangzhou 510275, China.
Nanoscale. 2017 Oct 19;9(40):15558-15565. doi: 10.1039/c7nr06021a.
MoS material is considered as a promising anode material candidate in Na-ion batteries (NIBs) due to its high theoretical capacity and layered structure. However, MoS nanosheets usually tend to restack or aggregate during the synthesis and cycling process, which makes the advantages of the separated nanosheets disappear. Here, we present a PVP-assisted synthesis for growing long hierarchical MoS nanofibers with a length up to 74.5 μm, which were further assembled from intercrossed curly nanosheets with expanded (002) interlayer spacings in the range of 0.62 nm to 1.14 nm. Such architectural design simultaneously combines multiple-scale structural features that are desired for Na-ion storage. On the one hand, the nanosheets can provide a large surface area which is in contact with the electrolyte, a short Na-ion diffusion pathway from the lateral side and facile Na-ion insertion and extraction through the expanded (002) interlayer; on the other hand, the hierarchical MoS nanofibers possess a one dimensional structure and a suitable amount of carbon, which can both serve as an electrical highway and prevent them from restacking, resulting in an enhanced electrochemical performance. When used as an anode in NIBs, they demonstrated excellent cycling performance (537 mA h g at 0.1 A g after 200 cycles, and 370 mA h g at 2 A g over 200 cycles) and outstanding rate capability (329 mA h g at 10 A g).
MoS 材料被认为是钠离子电池(NIBs)中很有前途的阳极材料候选物,因为它具有高的理论容量和层状结构。然而,MoS 纳米片在合成和循环过程中通常容易重新堆积或聚集,这使得分离纳米片的优势消失。在这里,我们提出了一种 PVP 辅助的合成方法,用于生长长的分层 MoS 纳米纤维,长度可达 74.5 μm,这些纳米纤维由相互交叉的卷曲纳米片进一步组装而成,其(002)层间距扩展到 0.62nm 至 1.14nm。这种结构设计同时结合了多个尺度的结构特征,这是钠离子存储所需要的。一方面,纳米片可以提供一个大的表面积与电解质接触,从横向提供一个短的钠离子扩散途径,并且通过扩展的(002)层容易插入和提取钠离子;另一方面,分层的 MoS 纳米纤维具有一维结构和适量的碳,它们既可以作为电子高速公路,又可以防止纳米片重新堆积,从而提高电化学性能。当作为钠离子电池的阳极时,它们表现出优异的循环性能(在 0.1 A g 下循环 200 次后为 537 mA h g,在 2 A g 下循环 200 次后为 370 mA h g)和出色的倍率性能(在 10 A g 下为 329 mA h g)。