Li J Q, Huang S, Chen Z P, Li Y, Song S H, Liu F S, Ao W Q
College of Materials Science and Engineering, Shenzhen University and Shenzhen Key Laboratory of Special Functional Materials, Shenzhen 518060, P. R. China.
Phys Chem Chem Phys. 2017 Nov 1;19(42):28749-28755. doi: 10.1039/c7cp04931e.
A lead-free SnTe compound shows good electrical properties but also high thermal conductivity, resulting in a low figure of merit ZT. We demonstrate a significant enhancement of the thermoelectric properties of SnTe by (Ge, Mn) co-doping. (Ge, Mn) co-doped samples (SnGe)MnTe with x = 0, 0.03, 0.06, 0.09, 0.12, 0.15, 0.18 and 0.2 were prepared for this investigation. The substitution of Ge for Sn in SnTe promotes the solubility of Mn in a SnTe-based phase up to 20 at%, which further enlarges the band gap and gives rise to enhanced valence band convergence as compared with Mn doping, leading to a notably increased Seebeck coefficient and a power factor. All alloys retain p-type conduction and hole carrier concentration increases with increasing Mn content. The solute Ge and Mn atoms as well as the second phase of Ge in a SnTe-based system enhance phonon scattering and thus reduce thermal conductivity. The synergistic role that Ge and Mn play in regulating the electron and phonon transport of SnTe yields a maximum figure of merit ZT of 1.22 at 873 K for the sample (SnGe)MnTe.
一种无铅SnTe化合物具有良好的电学性能,但热导率也很高,导致其优值ZT较低。我们通过(Ge,Mn)共掺杂证明了SnTe热电性能的显著增强。为此研究制备了x = 0、0.03、0.06、0.09、0.12、0.15、0.18和0.2的(Ge,Mn)共掺杂样品(SnGe)MnTe。在SnTe中用Ge替代Sn可促进Mn在SnTe基相中的溶解度高达20 at%,与Mn掺杂相比,这进一步扩大了带隙并导致价带收敛增强,从而使塞贝克系数和功率因子显著增加。所有合金均保持p型导电,且空穴载流子浓度随Mn含量的增加而增加。溶质Ge和Mn原子以及SnTe基体系中的Ge第二相增强了声子散射,从而降低了热导率。Ge和Mn在调节SnTe的电子和声子输运中所起的协同作用,使得样品(SnGe)MnTe在873 K时的最大优值ZT为1.22。