College of Environment and Chemical Engineering, Dalian University , Dalian 116622, P. R. China.
Institute of Physics, Polish Academy of Sciences , 02-668 Warsaw, Poland.
ACS Appl Mater Interfaces. 2017 Dec 13;9(49):43343-43351. doi: 10.1021/acsami.7b12535. Epub 2017 Nov 28.
Electron-phonon relaxation in thin metal films is an important consideration for many ultrasmall devices and ultrafast applications. Recent time-resolved experiments demonstrate a significant, more than a factor of five, increase in the electron-phonon coupling and acceleration in the electron-phonon relaxation rate when a narrow Ti adhesion layer is introduced between an Au film and a nonmetal substrate. Using nonadiabatic molecular dynamics combined with real-time time-dependent density functional theory, we identify the reasons that give rise to this strong effect. First, the Ti layer greatly enhances the density of states (DOS) in the energy region starting at 1 eV below the Fermi level and extending several electronvolts above it. Second, Ti atoms are four times lighter than Au atoms and therefore generate larger nonadiabatic (NA) electron-phonon coupling. Because the transition rates depend on coupling and DOS, both the factors accelerate the dynamics. Showing good agreement with the experiments, the time-domain atomistic simulations provide a detailed mechanistic understanding of the electron-phonon relaxation dynamics in thin gold films and related nanomaterials.
在许多超小型器件和超快应用中,薄金属膜中的电子-声子弛豫是一个重要的考虑因素。最近的时间分辨实验表明,当在金膜和非金属衬底之间引入窄 Ti 粘附层时,电子-声子耦合显著增加,电子-声子弛豫速率加快,超过了五倍。使用非绝热分子动力学结合实时时间相关密度泛函理论,我们确定了导致这种强效应的原因。首先,Ti 层大大增强了从费米能级以下 1 eV 开始并延伸几个电子伏特以上的能量区域中的态密度 (DOS)。其次,Ti 原子的重量比 Au 原子轻四倍,因此产生更大的非绝热 (NA) 电子-声子耦合。由于跃迁速率取决于耦合和 DOS,这两个因素都加速了动力学。与实验吻合较好,时域原子模拟提供了对薄金膜和相关纳米材料中电子-声子弛豫动力学的详细机制理解。