MAX IV Laboratory, Lund University , 221 00 Lund, Sweden.
Institute of Physics, Polish Academy of Sciences , 02-668 Warsaw, Poland.
ACS Nano. 2018 Jan 23;12(1):617-626. doi: 10.1021/acsnano.7b07502. Epub 2017 Dec 18.
The "double Dirac cone" 2D topological interface states found on the (001) faces of topological crystalline insulators such as PbSnSe feature degeneracies located away from time reversal invariant momenta and are a manifestation of both mirror symmetry protection and valley interactions. Similar shifted degeneracies in 1D interface states have been highlighted as a potential basis for a topological transistor, but realizing such a device will require a detailed understanding of the intervalley physics involved. In addition, the operation of this or similar devices outside of ultrahigh vacuum will require encapsulation, and the consequences of this for the topological interface state must be understood. Here we address both topics for the case of 2D surface states using angle-resolved photoemission spectroscopy. We examine bulk PbSnSe(001) crystals overgrown with PbSe, realizing trivial/topological heterostructures. We demonstrate that the valley interaction that splits the two Dirac cones at each X̅ is extremely sensitive to atomic-scale details of the surface, exhibiting non-monotonic changes as PbSe deposition proceeds. This includes an apparent total collapse of the splitting for sub-monolayer coverage, eliminating the Lifshitz transition. For a large overlayer thickness we observe quantized PbSe states, possibly reflecting a symmetry confinement mechanism at the buried topological interface.
在拓扑晶体绝缘体的(001)面上发现的“双狄拉克锥”二维拓扑界面态具有远离时间反演不变动量的简并,这是镜像对称保护和谷相互作用的表现。类似的在一维界面态中的偏移简并已被强调为拓扑晶体管的潜在基础,但要实现这样的器件,需要详细了解所涉及的谷间物理。此外,这种或类似器件在超高真空外的运行将需要封装,这对拓扑界面态的影响必须得到理解。在这里,我们使用角分辨光电子能谱研究了二维表面态的这两个问题。我们研究了 PbSe 覆盖的 PbSnSe(001)体晶体,实现了平凡/拓扑异质结构。我们证明,在每个 X̅处分裂两个狄拉克锥的谷相互作用对表面的原子尺度细节极其敏感,随着 PbSe 沉积的进行,表现出非单调的变化。这包括在亚单层覆盖下分裂的明显完全崩溃,消除了 Lifshitz 转变。对于较大的覆盖层厚度,我们观察到量子化的 PbSe 态,这可能反映了埋藏拓扑界面的对称限制机制。