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GHz频率下纳米颗粒状FeCo-MgF薄膜中的磁电效应。

Magnetoelectric effect in nanogranular FeCo-MgF films at GHz frequencies.

作者信息

Ikeda Kenji, Kobayashi Nobukiyo, Arai Ken-Ichi, Yabukami Shin

机构信息

Research Institute for Electromagnetic Materials, 2-1-1 Yagiyama-minami, Taihaku-ku, Sendai 982-0807, Japan.

Tohoku Gakuin University, 1-13-1 Chuou, Tagajou-si, Miyagi 985-8537, Japan.

出版信息

J Magn Magn Mater. 2018 Jan 15;446:80-86. doi: 10.1016/j.jmmm.2017.08.088.

DOI:10.1016/j.jmmm.2017.08.088
PMID:29343883
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5656093/
Abstract

The magnetoelectric effect is a key issue for material science and is particularly significant in the high frequency band, where it is indispensable in industrial applications. Here, we present for the first time, a study of the high frequency tunneling magneto-dielectric (TMD) effect in nanogranular FeCo-MgF films, consisting of nanometer-sized magnetic FeCo granules dispersed in an MgF insulator matrix. Dielectric relaxation and the TMD effect are confirmed at frequencies over 10 MHz. The frequency dependence of dielectric relaxation is described by the Debye-Fröhlich model, taking relaxation time dispersion into account, which reflects variations in the nature of the microstructure, such as granule size, and the inter-spacing between the granules that affect the dielectric response. The TMD effect reaches a maximum at a frequency that is equivalent to the inverse of the relaxation time. The frequency where the peak TMD effect is observed varies between 12 MHz and 220 MHz, depending on the concentration of magnetic metal in the nanogranular films. The inter-spacing of the films decreases with increasing magnetic metal concentration, in accordance with the relaxation time. These results indicate that dielectric relaxation is controlled by changing the nanostructure, using the deposition conditions. A prospective application of these nanogranular films is in tunable impedance devices for next-generation mobile communication systems, at frequencies over 1 GHz, where capacitance is controlled using the applied magnetic field.

摘要

磁电效应是材料科学中的一个关键问题,在高频波段尤为重要,在工业应用中不可或缺。在此,我们首次展示了对纳米颗粒FeCo-MgF薄膜中高频隧穿磁电介质(TMD)效应的研究,该薄膜由分散在MgF绝缘体基质中的纳米级磁性FeCo颗粒组成。在超过10 MHz的频率下证实了介电弛豫和TMD效应。介电弛豫的频率依赖性由德拜-弗勒利希模型描述,该模型考虑了弛豫时间色散,这反映了微观结构性质的变化,如颗粒尺寸以及影响介电响应的颗粒间间距。TMD效应在与弛豫时间倒数相等的频率处达到最大值。观察到峰值TMD效应的频率在12 MHz至220 MHz之间变化,这取决于纳米颗粒薄膜中磁性金属的浓度。薄膜的间距随着磁性金属浓度的增加而减小,这与弛豫时间一致。这些结果表明,通过改变沉积条件来改变纳米结构可以控制介电弛豫。这些纳米颗粒薄膜的一个潜在应用是在下一代移动通信系统的可调阻抗器件中,在超过1 GHz的频率下,通过施加磁场来控制电容。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1952/5656093/460ccc66b04b/gr9.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1952/5656093/675794d2ba64/gr1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1952/5656093/1e62969c53de/gr2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1952/5656093/2a7cb71614cf/gr3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1952/5656093/ab2a25ad4900/gr4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1952/5656093/9ec65153ad3c/gr5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1952/5656093/4aed8dac1830/gr6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1952/5656093/10d8765b8411/gr7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1952/5656093/333123e44f31/gr8.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1952/5656093/460ccc66b04b/gr9.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1952/5656093/675794d2ba64/gr1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1952/5656093/1e62969c53de/gr2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1952/5656093/2a7cb71614cf/gr3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1952/5656093/ab2a25ad4900/gr4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1952/5656093/9ec65153ad3c/gr5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1952/5656093/4aed8dac1830/gr6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1952/5656093/10d8765b8411/gr7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1952/5656093/333123e44f31/gr8.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1952/5656093/460ccc66b04b/gr9.jpg

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