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通过电流与偏压特性研究单分子结的界面和电子结构波动。

Fluctuation in Interface and Electronic Structure of Single-Molecule Junctions Investigated by Current versus Bias Voltage Characteristics.

机构信息

Department of Chemistry, Graduate School of Science and Engineering , Tokyo Institute of Technology , 2-12-1 W4-10 Ookayama , Meguro-ku, Tokyo 152-8551 , Japan.

出版信息

J Am Chem Soc. 2018 Mar 14;140(10):3760-3767. doi: 10.1021/jacs.7b13694. Epub 2018 Feb 27.

Abstract

Structural and electronic detail at the metal-molecule interface has a significant impact on the charge transport across the molecular junctions, but its precise understanding and control still remain elusive. On the single-molecule scale, the metal-molecule interface structures and relevant charge transport properties are subject to fluctuation, which contain the fundamental science of single-molecule transport and implication for manipulability of the transport properties in electronic devices. Here, we present a comprehensive approach to investigate the fluctuation in the metal-molecule interface in single-molecule junctions, based on current-voltage ( I- V) measurements in combination with first-principles simulation. Contrary to conventional molecular conductance studies, this I- V approach provides a correlated statistical description of both the degree of electronic coupling across the metal-molecule interface and the molecular orbital energy level. This statistical approach was employed to study fluctuation in single-molecule junctions of 1,4-butanediamine (DAB), pyrazine (PY), 4,4'-bipyridine (BPY), and fullerene (C). We demonstrate that molecular-dependent fluctuation of σ-, π-, and π-plane-type interfaces can be captured by analyzing the molecular orbital (MO) energy level under mechanical perturbation. While the MO level of DAB with the σ-type interface shows weak distance dependence and fluctuation, the MO level of PY, BPY, and C features unique distance dependence and molecular-dependent fluctuation against the mechanical perturbation. The MO level of PY and BPY with the σ+π-type interface increases with the increase in the stretch distance. In contrast, the MO level of C with the π-plane-type interface decreases with the increase in the stretching perturbation. This study provides an approach to resolve the structural and electronic fluctuation in the single-molecule junctions and insight into the molecular-dependent fluctuation in the junctions.

摘要

金属-分子界面的结构和电子细节对分子结的电荷输运有重大影响,但对其确切的理解和控制仍然难以捉摸。在单分子尺度上,金属-分子界面结构和相关的电荷输运性质受到波动的影响,这包含了单分子输运的基础科学和对电子器件中输运性质的可操作性的启示。在这里,我们提出了一种综合的方法来研究单分子结中金属-分子界面的波动,该方法基于电流-电压(I-V)测量结合第一性原理模拟。与传统的分子电导研究不同,这种 I-V 方法提供了金属-分子界面电子耦合程度和分子轨道能级的相关统计描述。这种统计方法被用于研究 1,4-丁二胺(DAB)、吡嗪(PY)、4,4'-联吡啶(BPY)和富勒烯(C)的单分子结中的波动。我们证明,通过分析机械扰动下的分子轨道(MO)能级,可以捕捉到分子依赖性的σ-、π-和π-面型界面的波动。虽然具有σ型界面的 DAB 的 MO 能级表现出较弱的距离依赖性和波动,但 PY、BPY 和 C 的 MO 能级则表现出独特的距离依赖性和对机械扰动的分子依赖性波动。具有σ+π型界面的 PY 和 BPY 的 MO 能级随拉伸距离的增加而增加。相比之下,具有π-面型界面的 C 的 MO 能级随拉伸扰动的增加而降低。这项研究提供了一种解决单分子结中结构和电子波动的方法,并深入了解了结中的分子依赖性波动。

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