ACS Appl Mater Interfaces. 2018 May 23;10(20):17455-17462. doi: 10.1021/acsami.8b02791. Epub 2018 May 14.
We propose a two-terminal nanomagnetic memory element based on magnetization reversal of a perpendicularly magnetized nanomagnet employing a unipolar voltage pulse that modifies the perpendicular anisotropy of the system. Our work demonstrates that the presence of Dzyaloshinskii-Moriya interaction can create an alternative route for magnetization reversal that obviates the need for utilizing precessional magnetization dynamics as well as a bias magnetic field that are employed in traditional voltage control of magnetic anisotropy (VCMA)-based switching of perpendicular magnetization. We show with extensive micromagnetic simulation, in the presence of thermal noise, that the proposed skyrmion-mediated VCMA switching mechanism is robust at room temperature leading to extremely low error switching while also being potentially 1-2 orders of magnitude more energy efficient than state-of-the-art spin transfer torque-based switching.
我们提出了一种基于使用单极电压脉冲改变系统的各向异性来实现垂直磁化纳米磁体的磁化反转的两端纳米磁存储器元件。我们的工作表明，Dzyaloshinskii-Moriya 相互作用的存在可以为磁化反转创造一条替代途径，从而无需使用传统的用于控制垂直磁化的各向异性的电压（VCMA）中的进动磁化动力学以及偏置磁场。我们通过广泛的微磁模拟表明，在存在热噪声的情况下，所提出的基于斯格明子的 VCMA 切换机制在室温下具有鲁棒性，导致极低的错误切换，同时比最先进的基于自旋转移转矩的切换方式潜在地节能 1-2 个数量级。
