Nano-Science Center and Department of Chemistry, University of Copenhagen, Copenhagen, Denmark.
Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY, USA.
Nature. 2018 Jun;558(7710):415-419. doi: 10.1038/s41586-018-0197-9. Epub 2018 Jun 6.
The tunnelling of electrons through molecules (and through any nanoscale insulating and dielectric material ) shows exponential attenuation with increasing length , a length dependence that is reflected in the ability of the electrons to carry an electrical current. It was recently demonstrated that coherent tunnelling through a molecular junction can also be suppressed by destructive quantum interference , a mechanism that is not length-dependent. For the carbon-based molecules studied previously, cancelling all transmission channels would involve the suppression of contributions to the current from both the π-orbital and σ-orbital systems. Previous reports of destructive interference have demonstrated a decrease in transmission only through the π-channel. Here we report a saturated silicon-based molecule with a functionalized bicyclo[2.2.2]octasilane moiety that exhibits destructive quantum interference in its σ-system. Although molecular silicon typically forms conducting wires , we use a combination of conductance measurements and ab initio calculations to show that destructive σ-interference, achieved here by locking the silicon-silicon bonds into eclipsed conformations within a bicyclic molecular framework, can yield extremely insulating molecules less than a nanometre in length. Our molecules also exhibit an unusually high thermopower (0.97 millivolts per kelvin), which is a further experimental signature of the suppression of all tunnelling paths by destructive interference: calculations indicate that the central bicyclo[2.2.2]octasilane unit is rendered less conductive than the empty space it occupies. The molecular design presented here provides a proof-of-concept for a quantum-interference-based approach to single-molecule insulators.
电子通过分子(以及任何纳米级绝缘和介电材料)的隧道效应表现出随着长度增加而呈指数衰减的趋势,这种长度依赖性反映在电子承载电流的能力上。最近的研究表明,通过分子结的相干隧道也可以被破坏性量子干涉所抑制,这种机制与长度无关。对于之前研究过的基于碳的分子,要消除所有传输通道,就需要抑制来自π轨道和σ轨道系统的电流贡献。之前关于破坏性干涉的报告仅表明通过π通道的传输减少了。在这里,我们报告了一种具有功能化双环[2.2.2]辛硅烷部分的饱和硅基分子,其在σ系统中表现出破坏性量子干涉。尽管分子硅通常形成导电线,但我们结合电导测量和从头计算表明,破坏性σ干涉(通过将硅-硅键锁定在双环分子框架内的重叠构象来实现)可以使长度小于 1 纳米的分子具有极高的绝缘性。我们的分子还表现出异常高的热电势(0.97 毫伏每开尔文),这是破坏性干涉抑制所有隧道路径的另一个实验特征:计算表明,中心的双环[2.2.2]辛硅烷单元的导电性比它占据的空空间还要差。这里提出的分子设计为基于量子干涉的单分子绝缘体提供了一个概念验证。