Zhang Yuman, Guo Mei, Dou Gang, Li Yuxia, Chen Guanrong
College of Electrical Engineering and Automation, Shandong University of Science and Technology, Qingdao, 266590 Shandong, China.
Department of Electronic Engineering, City University of Hong Kong, Hong Kong, China.
Chaos. 2018 Aug;28(8):083121. doi: 10.1063/1.5037479.
SBT memristor is a physical memristor built on nanometer film, described by a deterministic flux-controlled mathematical model. A new physical SBT-memristor-based Chua's circuit is presented in this paper, using the memristor to replace the Chua diode to connect with a negative conductance in parallel. The circuit can be well modeled by a fourth-order nonlinear system in the voltage-current domain and a third-order nonlinear system in the flux-charge domain, respectively. The dependences of the circuit stability on both the initial state value of the SBT memristor and the linear resistance in the circuit are analyzed theoretically, verified by numerical simulations, which shows that the circuit system has complex dynamics with multiple behaviors, including sink, periodic cycle, limit cycle, chaos, and some complicated transient dynamical behaviors. The new findings shed light on future research on the physical realization of the SBT-memristor-based Chua's circuit and other similar devices.
SBT忆阻器是一种基于纳米薄膜构建的物理忆阻器,由确定性通量控制数学模型描述。本文提出了一种基于物理SBT忆阻器的新型蔡氏电路,使用忆阻器代替蔡氏二极管与负电导并联连接。该电路在电压-电流域中可以由一个四阶非线性系统很好地建模,在通量-电荷域中可以由一个三阶非线性系统很好地建模。从理论上分析了电路稳定性对SBT忆阻器初始状态值和电路中线性电阻的依赖性,并通过数值模拟进行了验证,结果表明该电路系统具有复杂的动力学特性,包括汇、周期循环、极限环、混沌以及一些复杂的瞬态动力学行为。这些新发现为基于SBT忆阻器的蔡氏电路及其他类似器件的物理实现的未来研究提供了启示。