Wang Fangfang, Zhou Liyu, Ma Zhen, He Mingxue, Wu Fang, Liu Yunfei
College of Information Science and Technology, Nanjing Forestry University, Nanjing 210037, China.
Institution of Energy and Microstructure, Nanjing University of Science and Technology, Nanjing 210094, China.
Nanomaterials (Basel). 2018 Oct 4;8(10):789. doi: 10.3390/nano8100789.
The absence of magnetic moments in pristine two-dimensional (2D) semiconducting materials has attracted many research interests. Transition-metal (TM) decoration has been found to be an effective strategy to introduce magnetic moments in non-magnetic 2D semiconductors. However, the stability of TM atoms modified 2D semiconductors has not been well explored. Here, taking 2D Tin (II) sulfide (SnS) monolayer as a prototype, we explored the stability of magnetic semiconductors through this method. In our studies, all possible configurations of TM decoration have been considered, namely, adsorption on the intact surface, S vacancy, and Sn vacancy. Based on the energy gain and electronic analysis, our results revealed that most of the TM atoms will form a cluster, and only several TM atoms can be effectively doped into the SnS monolayer. Furthermore, the band calculations showed that only Mn substitution will give rise to a magnetic semiconductor. Thus, the reported results here provide some hidden information for further realization of the magnetic semiconductors and serve as a paradigm to prepare 2D magnetic semiconductors.
原始二维(2D)半导体材料中不存在磁矩,这引发了众多研究兴趣。人们发现过渡金属(TM)修饰是在非磁性二维半导体中引入磁矩的有效策略。然而,TM原子修饰的二维半导体的稳定性尚未得到充分研究。在此,以二维硫化亚锡(SnS)单层为原型,我们通过这种方法探索了磁性半导体的稳定性。在我们的研究中,考虑了TM修饰的所有可能构型,即完整表面吸附、S空位和Sn空位。基于能量增益和电子分析,我们的结果表明,大多数TM原子会形成团簇,只有少数几个TM原子能够有效地掺杂到SnS单层中。此外,能带计算表明,只有Mn替代会产生磁性半导体。因此,这里报道的结果为进一步实现磁性半导体提供了一些隐藏信息,并为制备二维磁性半导体提供了范例。