Facile preparation of Silicon/ZnO thin film heterostructures and ultrasensitive toxic gas sensing at room temperature: Substrate dependence on specificity.

Two types of silicon-Zinc oxide (ZnO) heterostructures were prepared simply by depositing (drop casting) chemically prepared ZnO nanoparticles onto single crystalline (p-type) silicon substrates (Si) as well as electrochemically prepared p-type porous silicon (PS). ZnO nanoparticles and PS/ZnO structures were characterized structurally by various techniques. By depositing in-plane gold contacts on the heterostructures, gas sensors were fabricated and characterized electrochemically by dc and ac impedance measurements. The PS/ZnO sensors showed specific response at room temperature for NO with increase in current and no significant response for other reducing and oxidizing gases. The sensor is sensitive to 200 ppb NO at 25 °C with 35% change in current and 50 s response time. Temperature dependent studies of sensor in the range of 25-100 °C have shown maximum sensitivity at 40 °C (50% change for 200 ppb) with decreasing sensitivity thereafter (23% change at 60 °C), indicating the suitability of the sensor till 60 °C. Alternatively Si/ZnO heterostructures showed maximum response with NO, along with lesser specific responses for SO and NH. Detailed multifrequency impedance studies with temperature suggested the role of space charge layers at various interfaces in the charge transport properties of PS/ZnO and Si/ZnO heterostructures resulting in their specific gas sensing properties.