Lee Jae-Ik, Jeong Bongwon, Park Sunwoo, Eun Youngkee, Kim Jongbaeg
School of Mechanical Engineering, Yonsei University, 50 Yonsei-ro, Seoul 03722, Korea.
Micromachines (Basel). 2017 Nov 25;8(12):342. doi: 10.3390/mi8120342.
Achieving the desired resonant frequency of resonators has been an important issue, since it determines their performance. This paper presents the design and analysis of two concepts for the resonant frequency tuning of resonators. The proposed methods are based on the stiffness alteration of the springs by geometrical modification (shaft-widening) or by mechanical restriction (shaft-holding) using micromachined frequency tuning units. Our designs have advantages in (1) reversible and repetitive tuning; (2) decoupled control over the amplitude of the resonator and the tuning ratio; and (3) a wide range of applications including torsional resonators. The ability to tune the frequency by both methods is predicted by finite element analysis (FEA) and experimentally verified on a torsional resonator driven by an electrostatic actuator. The tuning units and resonators are fabricated on a double silicon-on-insulator (DSOI) wafer to electrically insulate the resonator from the tuning units. The shaft-widening type and shaft-holding type exhibit a maximum tuning ratio of 5.29% and 10.7%, respectively.
实现谐振器所需的谐振频率一直是一个重要问题,因为它决定了谐振器的性能。本文介绍了两种用于谐振器谐振频率调谐的概念的设计与分析。所提出的方法基于通过几何修改(轴加宽)或使用微机械频率调谐单元进行机械限制(轴固定)来改变弹簧的刚度。我们的设计具有以下优点:(1)可逆且重复调谐;(2)对谐振器振幅和调谐比的解耦控制;(3)广泛的应用,包括扭转谐振器。通过有限元分析(FEA)预测了两种方法调谐频率的能力,并在由静电致动器驱动的扭转谐振器上进行了实验验证。调谐单元和谐振器制作在双绝缘体上硅(DSOI)晶圆上,以使谐振器与调谐单元电绝缘。轴加宽型和轴固定型的最大调谐比分别为5.29%和10.7%。