具有氮化铝镓插入层的高效氮化铟镓绿色微型倒装芯片发光二极管。

Highly efficient InGaN green mini-size flip-chip light-emitting diodes with AlGaN insertion layer.

机构信息

Research and Development Center for Semiconductor Lighting, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, People's Republic of China.

出版信息

Nanotechnology. 2019 Mar 1;30(9):095203. doi: 10.1088/1361-6528/aaf656. Epub 2018 Dec 5.

DOI:10.1088/1361-6528/aaf656

PMID:30523918

Abstract

We demonstrate highly efficient InGaN-based mini-size green light-emitting diodes (mLEDs) with AlGaN insertion layer in InGaN/GaN multiple quantum wells (MQWs) using metal organic chemical vapor deposition (MOCVD). High resolution transmission electron microscopy (HRTEM) results reveal that 'V' defects within active region can be effectively reduced by AlGaN insertion layer. Photoluminescence (PL) and time resolved photoluminescence (TRPL) results indicate an increase of radiative recombination efficiency. Very high performance 523 nm InGaN green flip-chip mLEDs (0.025 mm) with distributed Bragg reflector (DBR) show a high external quantum efficiency (EQE) of 38.0%, a high wall-plug efficiency (WPE) of 32.1% and a low forward voltage of 2.8 V at a working current density of 20 A cm, which are very promising for display application.

摘要

我们使用金属有机化学气相沉积（MOCVD）展示了在 InGaN/GaN 多量子阱（MQWs）中具有 AlGaN 插入层的高效 InGaN 基微型绿光发光二极管（mLED）。高分辨率透射电子显微镜（HRTEM）结果表明，AlGaN 插入层可以有效减少活性区域内的“V”缺陷。光致发光（PL）和时间分辨光致发光（TRPL）结果表明辐射复合效率提高。具有分布式布拉格反射器（DBR）的高性能 523nm InGaN 绿光倒装芯片 mLED（0.025mm）的外量子效率（EQE）高达 38.0%，功率效率（WPE）高达 32.1%，正向电压低至 2.8V，工作电流密度为 20A/cm，非常适合显示应用。