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高浓度偏硅酸钠抑制人脐静脉内皮细胞自噬流并诱导其凋亡。

High Concentration of Sodium Metasilicate Impairs Autophagic Flux and Induces Apoptosis in Human Umbilical Vein Endothelial Cells.

机构信息

Department of Orthopaedics, Zhongshan Hospital of Fudan University, 180 Fenglin Road, Shanghai, China.

出版信息

Biol Trace Elem Res. 2019 Sep;191(1):88-97. doi: 10.1007/s12011-018-1608-3. Epub 2019 Jan 2.

Abstract

Silicon-doped materials have been widely used in bone regeneration research; however, a consensus on the safety range of silicon ions has not been reached and its toxicity mechanism remains to be further elucidated. This study aims to explore whether high level of sodium metasilicate can induce toxicity effect in human umbilical vein endothelial cells (HUVEC) and the role of autophagy and apoptosis in its toxic mechanism. HUVEC was treated with different level of high silicon and then investigated with respect to morphologic change, cell viability, immunofluorescence, the level of autophagy, and apoptosis-related protein. Moreover, bafilomycin A1 (Baf A1) was applied to detect whether autophagic flux is disrupted, and 3-methyladenine (3-MA, an autophagy inhibitor) was used to determine the relationship between autophagy and apoptosis. Results demonstrated that high-level silicon induced cell viability to decrease; LC3-II, p62, and apoptosis-related proteins were up-regulated after exposure to high-dose silicon (sodium metasilicate concentration more than 1 mM). There is no significant difference in LC3-II and p62 between Baf A1 and sodium metasilicate-exposed group. Besides, 3-MA further increased the apoptotic rate by inhibiting autophagy after high silicon exposure. Collectively, high concentration of silicon can impair autophagy and induce apoptosis in human umbilical vein endothelial cells, and autophagy may play a protective role in HUVEC apoptosis. Furthermore, silicon concentration used in HUVEC should not be more than 1 mM.

摘要

硅掺杂材料已广泛应用于骨再生研究中;然而,对于硅离子的安全范围尚未达成共识,其毒性机制仍需进一步阐明。本研究旨在探讨高浓度偏硅酸钠是否会对人脐静脉内皮细胞(HUVEC)产生毒性作用,以及自噬和凋亡在其毒性机制中的作用。用不同浓度的高硅处理 HUVEC,然后观察其形态变化、细胞活力、免疫荧光、自噬水平和凋亡相关蛋白。此外,还应用巴弗洛霉素 A1(Baf A1)检测自噬流是否被破坏,并用 3-甲基腺嘌呤(3-MA,自噬抑制剂)来确定自噬与凋亡之间的关系。结果表明,高水平硅诱导细胞活力降低;暴露于高剂量硅(偏硅酸钠浓度大于 1mM)后,LC3-II、p62 和凋亡相关蛋白上调。Baf A1 和偏硅酸钠暴露组之间 LC3-II 和 p62 无显著差异。此外,3-MA 通过抑制自噬进一步增加了高硅暴露后的凋亡率。总之,高浓度硅可损害人脐静脉内皮细胞的自噬并诱导其凋亡,自噬可能在 HUVEC 凋亡中起保护作用。此外,HUVEC 中使用的硅浓度不应超过 1mM。

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