Center for Chemistry of High-Performance & Novel Materials, Department of Chemistry , Zhejiang University , Hangzhou 310027 , People's Republic of China.
Department of Physics , Zhejiang University , Hangzhou 310027 , People's Republic of China.
J Am Chem Soc. 2019 Feb 13;141(6):2288-2298. doi: 10.1021/jacs.8b08480. Epub 2019 Jan 30.
Mn-doped ZnSe nanocrystals (Mn:ZnSe d-dots) with high optical quality-high dopant emission quantum yield with monoexponential dopant-emission decay dynamics-enable systematic and quantitative studies of temperature- and Mn concentration-dependent optical properties of the dopant emission, especially its relationship with magnetic coupling. While temperature-dependent steady-state and transient dopant emission of d-dots with dilute Mn concentrations originated from isolated Mn ions, and can be quantitatively treated as a result of exciton-phonon coupling of isolated paramagnetic emission centers. Dopant emission of d-dots with high Mn concentrations (up to 50% of Zn ions being replaced by Mn ions in the core nanocrystals) are found solely related to magnetically coupled Mn emission. Magnetic coupling effects on steady-state dopant emission of d-dots with high Mn concentrations are much stronger than those observed for doped bulk semiconductors, which is found to follow a strong and universe shell-thickness dependence for the epitaxial ZnSe and/or ZnS shells of the d-dots. By exciting the magnetically coupled Mn ions directly, dopant-emission of d-dots with high Mn concentrations exhibit monoexponential decay dynamics. In addition to this emission channel, a minor channel with slightly longer decay lifetime appears when the host nanocrystals with high Mn concentrations are excited, which is barely visible at room temperature and increases its fraction by decreasing temperature.
掺锰的 ZnSe 纳米晶体(Mn:ZnSe d-点)具有高光学质量-高掺杂发射量子产率,具有单指数掺杂发射衰减动力学-能够系统地定量研究掺杂发射的温度和 Mn 浓度依赖性光学性质,特别是其与磁耦合的关系。虽然具有低浓度 Mn 的 d-点的掺杂发射的温度依赖性稳态和瞬态,可以定量地处理为孤立的顺磁发射中心的激子-声子耦合的结果。具有高浓度 Mn(高达核心纳米晶体中 50%的 Zn 离子被 Mn 离子取代)的 d-点的掺杂发射仅与磁耦合的 Mn 发射有关。对于具有高浓度 Mn 的 d-点的稳态掺杂发射的磁耦合效应比在掺杂的体半导体中观察到的要强得多,这发现对于 d-点的外延 ZnSe 和/或 ZnS 壳层具有强的和普遍的壳层厚度依赖性。通过直接激发磁耦合的 Mn 离子,具有高浓度 Mn 的 d-点的掺杂发射表现出单指数衰减动力学。除了这个发射通道之外,当用高浓度 Mn 的主体纳米晶体激发时,出现一个稍微长的衰减寿命的较小通道,在室温下几乎不可见,并且通过降低温度增加其分数。