Institute of Chemistry , Academia Sinica , 115 Taipei , Taiwan.
Department of Chemistry , National Kaohsiung Normal University , 824 Kaohsiung , Taiwan.
ACS Appl Mater Interfaces. 2019 Mar 20;11(11):10801-10809. doi: 10.1021/acsami.9b00873. Epub 2019 Mar 8.
The facile Chinese brush-coating method was used to prepare oriented thin films of hexa- peri-hexabenzocoronene (HBC) derivatives on the silicon substrate. As a result of the directional solution-coating, the D-symmetry (HBC-1,3,5-Ph-C12) and the C-symmetry (HBC-1,2,4-Ph-C12) derivatives displayed an anisotropic alignment, with mostly edge-on orientation on SiO surfaces modified with various silane-based monolayers. On these silane-modified surfaces, the higher symmetry molecule HBC-1,3,5-Ph-C12 developed a hexagonally packed superstructure, which provided greater π orbital overlap and presumably the electronic coupling between neighboring molecules. In particular, the use of an octyltrichlorosilane (OTS)-modified surface enabled brush-coated thin films to have higher anisotropic orientation, crystallinity, and favorable molecular arrangement. In contrast, the growth of the hexagonal packing of low-symmetry derivative HBC-1,2,4-Ph-C12 was only achieved on the phenyltrichlorosilane and OTS surfaces. Thin-film transistors based on these brush-coated films gave a maximum mobility of 0.1 and 0.056 cm V s, which are 2 orders of magnitude improvement over the devices with unoriented films prepared by spin-coating. The results indicate that the molecular packing of discotic liquid crystals on the silane-modified surface is sensitively influenced by the molecular symmetry, which affects intermolecular interactions as well as molecule/surface interactions. This study provides a simple way to fabricate aligned films for HBC derivatives for transistor application.
采用简易的毛笔涂布法,在硅基底上制备了六并苯并[ghi]苝(HBC)衍生物的取向薄膜。由于定向溶液涂布,D 对称(HBC-1,3,5-Ph-C12)和 C 对称(HBC-1,2,4-Ph-C12)衍生物表现出各向异性排列,在各种硅烷单层修饰的 SiO 表面上主要呈现边缘取向。在这些硅烷修饰的表面上,较高对称性的分子 HBC-1,3,5-Ph-C12 形成了六边形堆积的超结构,这提供了更大的π轨道重叠,可能还有相邻分子之间的电子耦合。特别是,使用辛基三氯硅烷(OTS)修饰的表面能够使刷涂薄膜具有更高的各向异性取向、结晶度和有利的分子排列。相比之下,低对称性衍生物 HBC-1,2,4-Ph-C12 的六边形堆积的生长仅在苯基三氯硅烷和 OTS 表面上实现。基于这些刷涂薄膜的薄膜晶体管的最大迁移率为 0.1 和 0.056 cm V s,比旋涂制备的无取向薄膜器件提高了 2 个数量级。结果表明,盘状液晶在硅烷修饰表面上的分子堆积对分子对称性敏感,这影响了分子间相互作用以及分子/表面相互作用。本研究为 HBC 衍生物的晶体管应用提供了一种简单的制备取向薄膜的方法。