Department of Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, Illinois, United States of America.
Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois, United States of America.
PLoS One. 2019 Apr 18;14(4):e0214971. doi: 10.1371/journal.pone.0214971. eCollection 2019.
In GaN-based high electron mobility transistors (HEMTs), the fast emission of longitudinal optical (LO) phonons can result in the formation of hot spots near the gate region where high electric fields produce hot electrons. In this work, we investigate the probability of phonon emission as a function of electron energy for confined and interface (IF) phonon modes for wurtzite GaN/InGaN/GaN heterostructures. Hot electrons radiate optical phonons which decay, anharmonically, into acoustic phonons that are essentially heat carriers. Herein, phonon engineering concepts are introduced which facilitate thermal management through the production of polar optical phonons. Some of the electrons near a semiconductor gate which manifests a strong electric field, are accelerated and the resulting hot electrons will produce confined and interface modes when the electrons are incident on a suitably-placed quantum well. This paper focuses on the production of confined and interface phonons. It is shown that interface modes may be preferentially produced which lead to elongated, lower-temperature hot spots.
在基于 GaN 的高电子迁移率晶体管 (HEMT) 中，长光学 (LO) 声子的快速发射会导致栅极附近形成热点，在该区域，高电场会产生热电子。在这项工作中，我们研究了电子能量对限制和界面 (IF) 声子模式的声子发射概率，用于纤锌矿 GaN/InGaN/GaN 异质结构。热电子辐射光声子，这些声子非谐地衰减为声子，实质上是热载体。本文引入了声子工程概念，通过产生极化光学声子来促进热管理。在具有强电场的半导体栅极附近的一些电子被加速，当电子入射到适当放置的量子阱时，产生的热电子将产生限制和界面模式。本文重点介绍了限制和界面声子的产生。结果表明，可以优先产生界面模式，从而导致拉长的、低温的热点。
