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噻吩二取代苯并噻二唑衍生物:一种用于制备深红色至近红外(NIR)有机发光二极管的有效平面化策略。

Thiophene Disubstituted Benzothiadiazole Derivatives: An Effective Planarization Strategy Toward Deep-Red to Near-Infrared (NIR) Organic Light-Emitting Diodes.

作者信息

Xie Wentao, Li Binbin, Cai Xinyi, Li Mengke, Qiao Zhenyang, Tang Xiaohui, Liu Kunkun, Gu Cheng, Ma Yuguang, Su Shi-Jian

机构信息

State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou, China.

出版信息

Front Chem. 2019 Apr 18;7:276. doi: 10.3389/fchem.2019.00276. eCollection 2019.

Abstract

As one of the three primary colors that are indispensable in full-color displays, the development of red emitters is far behind the blue and green ones. Here, three novel orange-yellow to near-infrared (NIR) emitters based on 5,6-difluorobenzo[c][1,2,5]thiadiazole (BTDF) namely BTDF-TPA, BTDF-TTPA, and BTDF-TtTPA were designed and synthesized. Density functional theory analysis and photophysical characterization reveal that these three materials possess hybridized local and charge-transfer (HLCT) state feature and a feasible reverse intersystem crossing (RISC) from the high-lying triplet state to the singlet state may conduce to an exciton utilization exceeding the limit of 25% of traditional fluorescence materials under electrical excitation. The insertion of thiophene with small steric hindrance as π-bridge between the electron-donating (D) moiety triphenylamine (TPA) and the electron-accepting (A) moiety BTDF not only results in a remarkable 67 nm red-shift of the emission peak but also brings about a large overlap of frontier molecular orbitals to guarantee high radiative transition rate that is of great significance to obtain high photoluminescence quantum yield (PLQY) in the "energy-gap law" dominated long-wavelength emission region. Consequently, an attractive high maximum external quantum efficiency (EQE) of 5.75% was achieved for the doped devices based on these thiophene π-bridged emitters, giving a deep-red emission with small efficiency roll-off. Remarkably, NIR emission could be obtained for the non-doped devices, achieving an excellent maximum EQE of 1.44% and Commission Internationale de l'Éclairage (CIE) coordinates of (0.71, 0.29). These results are among the highest efficiencies in the reported deep-red to NIR fluorescent OLEDs and offer a new π-bridge design strategy in D-π-A and D-π-Aπ-D red emitter design.

摘要

作为全彩显示器中不可或缺的三种原色之一,红色发光体的发展远远落后于蓝色和绿色发光体。在此,设计并合成了三种基于5,6-二氟苯并[c][1,2,5]噻二唑(BTDF)的新型橙黄色至近红外(NIR)发光体,即BTDF-TPA、BTDF-TTPA和BTDF-TtTPA。密度泛函理论分析和光物理表征表明,这三种材料具有杂化局域和电荷转移(HLCT)态特征,并且从高能三重态到单重态的可行反向系间窜越(RISC)可能有助于在电激发下激子利用率超过传统荧光材料25%的极限。在供电子(D)部分三苯胺(TPA)和吸电子(A)部分BTDF之间插入具有小空间位阻的噻吩作为π桥,不仅导致发射峰显著红移67 nm,还带来前沿分子轨道的大量重叠,以保证高辐射跃迁速率,这对于在“能隙定律”主导的长波长发射区域获得高光致发光量子产率(PLQY)具有重要意义。因此,基于这些噻吩π桥发光体的掺杂器件实现了5.75%的诱人高最大外量子效率(EQE),发出深红色光且效率滚降小。值得注意的是,非掺杂器件可实现近红外发射,获得了1.44%的优异最大EQE和国际照明委员会(CIE)坐标(0.71, 0.29)。这些结果是已报道的深红色至近红外荧光有机发光二极管中效率最高的结果之一,并为D-π-A和D-π-Aπ-D红色发光体设计提供了一种新的π桥设计策略。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/84a9/6482244/6a13fd392108/fchem-07-00276-g0006.jpg

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