Lin Shiquan, Xu Liang, Zhu Laipan, Chen Xiangyu, Wang Zhong Lin
Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, P. R. China.
School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.
Adv Mater. 2019 Jul;31(27):e1901418. doi: 10.1002/adma.201901418. Epub 2019 May 16.
Contact electrification (CE) (or triboelectrification) is a well-known phenomenon, and the identity of the charge carriers and their transfer mechanism have been discussed for decades. Recently, the species of transferred charges in the CE between a metal and a ceramic was revealed as electron transfer and its subsequent release is dominated by the thermionic emission process. Here, the release of CE-induced electrostatic charges on a dielectric surface under photon excitation is studied by varying the light intensity and wavelength, but under no significant raise in temperature. The results suggest that there exists a threshold photon energy for releasing the triboelectric charges from the surface, which is 4.1 eV (light wavelength at 300 nm) for SiO and 3.4 eV (light wavelength at 360 nm) for PVC; photons with energy smaller than this cannot effectively excite the surface electrostatic charges. This process is attributed to the photoelectron emission of the charges trapped in the surface states of the dielectric material. Further, a photoelectron emission model is proposed to describe light-induced charge decay on a dielectric surface. The findings provide an additional strong evidence about the electron transfer process in the CE between metals and dielectrics as well as polymers.
接触起电(CE)(或摩擦起电)是一种众所周知的现象,关于电荷载流子的身份及其转移机制已经讨论了数十年。最近,金属与陶瓷之间接触起电过程中转移电荷的种类被揭示为电子转移,并且其随后的释放由热电子发射过程主导。在此,通过改变光强度和波长,但在温度无显著升高的情况下,研究了光子激发下电介质表面接触起电诱导的静电荷的释放。结果表明,存在一个用于从表面释放摩擦电荷的阈值光子能量,对于SiO而言为4.1 eV(光波长为300 nm),对于PVC而言为3.4 eV(光波长为360 nm);能量小于此值的光子不能有效地激发表面静电荷。这个过程归因于被困在电介质材料表面态中的电荷的光电子发射。此外,提出了一个光电子发射模型来描述电介质表面上光诱导的电荷衰减。这些发现为金属与电介质以及聚合物之间接触起电过程中的电子转移过程提供了又一有力证据。