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零维无铅(C₅H₉N₂)InBr单晶中的本征自陷发射

Intrinsic Self-Trapped Emission in 0D Lead-Free (C H N ) In Br Single Crystal.

作者信息

Zhou Lei, Liao Jin-Feng, Huang Zeng-Guang, Wei Jun-Hua, Wang Xu-Dong, Chen Hong-Yan, Kuang Dai-Bin

机构信息

MOE Key Laboratory of Bioinorganic and Synthetic Chemistry, Lehn Institute of Functional Materials, School of Chemistry, Sun Yat-sen University, Guangzhou, 510275, P. R. China.

出版信息

Angew Chem Int Ed Engl. 2019 Oct 21;58(43):15435-15440. doi: 10.1002/anie.201907503. Epub 2019 Sep 13.

Abstract

Low-dimensional lead halide perovskite materials recently have drawn much attention owing to the intriguing broadband emissions; however, the toxicity of lead will hinder their future development. Now, a lead-free (C H N ) In Br single crystal with a unique zero-dimensional (0D) structure constituted by [InBr ] octahedral and [InBr ] tetrahedral units is described. The single crystal exhibits broadband photoluminescence (PL) that spans almost the whole visible spectrum with a lifetime of 3.2 μs. Computational and experimental studies unveil that an excited-state structural distortion in [InBr ] octahedral units enables the formation of intrinsic self-trapped excitons (STEs) and thus contributing the broad emission. Furthermore, femtosecond transient absorption (fs-TA) measurement reveals that the ultrafast STEs formation together with an efficient intersystem crossing has made a significant contribution to the long-lived and broad STE-based emission behavior.

摘要

低维铅卤化物钙钛矿材料因其引人入胜的宽带发射特性,近来备受关注;然而,铅的毒性将阻碍其未来发展。如今,一种具有独特零维(0D)结构的无铅(C₅H₆N₂)InBr单晶被报道,该结构由[InBr₆]八面体和[InBr₄]四面体单元构成。该单晶呈现出宽带光致发光(PL),其几乎覆盖了整个可见光谱,寿命为3.2 μs。计算和实验研究表明,[InBr₆]八面体单元中的激发态结构畸变能够形成本征自陷激子(STE),从而产生宽带发射。此外,飞秒瞬态吸收(fs-TA)测量表明,超快STE的形成以及有效的系间窜越对基于STE的长寿命和宽带发射行为起到了重要作用。

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