Stiehm Torsten, Schneider Robert, Kern Johannes, Niehues Iris, Michaelis de Vasconcellos Steffen, Bratschitsch Rudolf
Institute of Physics and Center for Nanotechnology, University of Münster, 48149 Münster, Germany.
Rev Sci Instrum. 2019 Aug;90(8):083102. doi: 10.1063/1.5100593.
Two-dimensional semiconductors have recently emerged as promising materials for novel optoelectronic devices. In particular, they exhibit favorable nonlinear optical properties. Potential applications include broadband and ultrafast light sources, optical signal processing, and generation of nonclassical light states. The prototypical nonlinear process second harmonic generation (SHG) is a powerful tool to gain insight into nanoscale materials because of its dependence on crystal symmetry. Material resonances also play an important role in the nonlinear response. Notably, excitonic resonances critically determine the magnitude and spectral dependence of the nonlinear susceptibility. We perform ultrabroadband SHG spectroscopy of atomically thin semiconductors by using few-cycle femtosecond infrared laser pulses. The spectrum of the second harmonic depends on the investigated material, MoS or WS, and also on the spectral and temporal shape of the fundamental laser pulses used for excitation. Here, we present a method to remove the influence of the laser by normalization with the flat SHG response of thin hexagonal boron nitride crystals. Moreover, we exploit the distinct angle dependence of the second harmonic signal to suppress two-photon photoluminescence from the semiconductor monolayers. Our experimental technique provides the calibrated frequency-dependent nonlinear susceptibility χ(ω) of atomically thin materials. It allows for the identification of the prominent A and B exciton resonances, as well as excited exciton states.
二维半导体最近已成为用于新型光电器件的有前景的材料。特别是,它们表现出良好的非线性光学性质。潜在应用包括宽带和超快光源、光信号处理以及非经典光态的产生。典型的非线性过程二次谐波产生(SHG)是深入了解纳米级材料的有力工具,因为它依赖于晶体对称性。材料共振在非线性响应中也起着重要作用。值得注意的是,激子共振决定性地决定了非线性极化率的大小和光谱依赖性。我们通过使用少周期飞秒红外激光脉冲对原子级薄的半导体进行超宽带SHG光谱分析。二次谐波的光谱取决于所研究的材料,MoS或WS,还取决于用于激发的基频激光脉冲的光谱和时间形状。在这里,我们提出一种通过用薄六方氮化硼晶体的平坦SHG响应进行归一化来消除激光影响的方法。此外,我们利用二次谐波信号独特的角度依赖性来抑制半导体单层的双光子光致发光。我们的实验技术提供了原子级薄材料校准后的频率相关非线性极化率χ(ω)。它允许识别突出的A和B激子共振以及激发的激子态。