采用 Ar&H 等离子体处理对 p-CuAlOvia 进行表面氧空位缺陷工程化，以提高 VOCs 传感性能。
Surface oxygen vacancy defect engineering of p-CuAlOvia Ar&H plasma treatment for enhancing VOCs sensing performances.
机构信息
Anhui Provincial Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei, 230031, China.
Opto-Electrochemical Sensing Research Team, National Electronic and Computer Technology Center, Pathum Thani 12120, Thailand.
出版信息
Chem Commun (Camb). 2019 Sep 26;55(78):11691-11694. doi: 10.1039/c9cc05881h.
Ar&H2 plasma treatment was proposed to enhance the response of a p-CuAlO2 sensor toward volatile organic compounds. Comprehensive defect characterization studies indicate a substantial increase of surface unsaturated oxygen vacancy (VO) defects via plasma treatment, which could provide active sites for molecule adsorption and the subsequent interfacial redox reaction.
Ar&H2 等离子体处理被提出以增强 p-CuAlO2 传感器对挥发性有机化合物的响应。综合缺陷特征研究表明，等离子体处理会显著增加表面不饱和氧空位 (VO) 缺陷，这可为分子吸附和随后的界面氧化还原反应提供活性位点。
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