Department of Chemistry, Institute for Molecular Science and Fusion Technology, Kangwon National University, Chuncheon 24341, Korea.
Department of Chemistry Education, Chungbuk National University, Cheongju 28644, Korea.
Molecules. 2019 Nov 15;24(22):4135. doi: 10.3390/molecules24224135.
9,9'-Spirobifluorene-based -carboranyl compounds and were prepared and fully characterized by multinuclear nuclear magnetic resonance (NMR) spectroscopy and elemental analysis. The solid-state structure of was also determined by single-crystal X-ray diffractometry. The two carboranyl compounds display major absorption bands that are assigned to -* transitions involving their spirobifluorene groups, as well as weak intramolecular charge-transfer (ICT) transitions between the -carboranes and their spirobifluorene groups. While only exhibited high-energy emissions (λ = ca. 350 nm) in THF at 298 K due to locally excited (LE) states assignable to -* transitions involving the spirobifluorene group alone, a remarkable emission in the low-energy region was observed in the rigid state, such as in THF at 77 K or the film state. Furthermore, displays intense dual emissive patterns in both high- and low-energy regions in all states. Electronic transitions that were calculated by time-dependent-DFT (TD-DFT) for each compound based on ground (S) and first-excited (S) state optimized structures clearly verify that the low-energy emissions are due to ICT-based radiative decays. Calculated energy barriers that are based on the relative energies associated with changes in the dihedral angle around the -carborane cages in and clearly reveal that the -carborane cage in rotates more freely than that in . All of the molecular features indicate that ICT-based radiative decay is only available to the rigid state in the absence of structural fluctuations, in particular the free-rotation of the -carborane cage.
基于 9,9'-螺二芴的 -碳硼烷化合物 和 被制备并通过多核核磁共振(NMR)光谱和元素分析进行了充分的表征。通过单晶 X 射线衍射法也确定了 的固态结构。这两种碳硼烷化合物显示出主要的吸收带,这些吸收带归因于涉及它们的螺二芴基团的 -* 跃迁,以及 -碳硼烷和它们的螺二芴基团之间的弱分子内电荷转移(ICT)跃迁。虽然 在 298 K 的 THF 中仅由于可归因于涉及螺二芴基团的 -* 跃迁的局域激发(LE)状态而表现出高能发射(λ≈350nm),但在刚性状态下,例如在 77 K 的 THF 或薄膜状态下,观察到了在低能区的显著发射。此外, 在所有状态下均在高能区和低能区显示出强烈的双重发射模式。基于基态(S)和第一激发态(S)优化结构,通过时间相关密度泛函理论(TD-DFT)为每个化合物计算的电子跃迁清楚地证明了低能发射是由于 ICT 辐射衰减。基于与 和 中 -碳硼烷笼周围二面角变化相关的相对能计算的能量势垒清楚地表明, 在 中更自由地旋转。所有的分子特征表明,ICT 辐射衰减仅在不存在结构波动的情况下,特别是在 -碳硼烷笼的自由旋转的情况下,才对刚性态有效。