Rhenium disulfide (ReS) is a transition metal dichalcogenide with a layer-independent direct bandgap. Notably, the weak interlayer coupling owing to its T-phase structure enables multi-layer ReS to behave similarly to decoupled monolayers. This inherent characteristic makes continuous multilayer ReS film a unique platform for large-area electronic applications. To date, the bulk of work on ReS has been conducted using mechanically exfoliated samples or small size flakes (<1 mm) with no potential for large-scale electronics. A chemical vapor deposition (CVD) synthesis of a large area, continuous ReS film directly on a SiO substrate is also known to be more challenging compared with that of other 2D materials, such as MoS and WS. This is partly due to its tendency to grow into discrete dendritic structures. In this study, a large-area (>1 cm), continuous multilayer ReS film is directly synthesized on a SiO substrate without any transfer process. The polycrystalline ReS film synthesized by this method exhibits one of the fastest photoresponse speeds (0.03 s rise time and 0.025 s decay time) among the reported CVD films. The photoresponsivity R was also the highest among large-area CVD films. The synthesis method for a continuous multilayer ReS film is amenable to large-scale integration and will pave the way for practical optoelectronic applications based on 2D layered materials.