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插层介导的非常规石墨烯/PtSe2 垂直异质结构的合成及界面耦合效应探索。

Intercalation-Mediated Synthesis and Interfacial Coupling Effect Exploration of Unconventional Graphene/PtSe Vertical Heterostructures.

机构信息

Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics , Zhengzhou University , Zhengzhou 450052 , China.

Department of Materials Science and Engineering, College of Engineering , Peking University , Beijing 100871 , China.

出版信息

ACS Appl Mater Interfaces. 2019 Dec 26;11(51):48221-48229. doi: 10.1021/acsami.9b16748. Epub 2019 Dec 12.

Abstract

Vertical heterostructures formed by stacks of two-dimensional (2D) layered materials with disparate electronic properties have attracted tremendous attention for their versatile applications. The targeted fabrication of such vertical stacks with clean interfaces and a specific stacking sequence remains challenging. Herein, we design a two-step chemical vapor deposition route for the direct synthesis of unconventional graphene/PtSe vertical stacks (Gr/PtSe) on conductive Au foil substrates. Monolayer PtSe (1L-PtSe) was detected to preferentially grow at the interface of the predeposited Gr layer and the Au foil substrate rather than on the Gr surface. The concurrent effect from the strong interaction of PtSe/Au and the space confinement effect of Gr/Au are proposed to be the essential mechanisms. Particularly, this unique growth system allows us to uncover the intrinsic property of 1L-PtSe and the interfacial coupling effect using scanning tunneling microscopy/spectroscopy. Our work should hereby enable significant advances in the synthesis of 2D-based vertical heterostructures and in the exploration of their intrinsic interface properties.

摘要

由具有不同电子特性的二维(2D)层状材料堆叠而成的垂直异质结构因其多功能的应用而引起了极大的关注。然而,具有清洁界面和特定堆叠顺序的这种垂直堆叠的目标制造仍然具有挑战性。在此,我们设计了一种两步化学气相沉积方法,用于在导电 Au 箔基底上直接合成非传统的石墨烯/ PtSe 垂直堆叠(Gr/PtSe)。检测到单层 PtSe(1L-PtSe)优先在预先沉积的 Gr 层和 Au 箔基底的界面处生长,而不是在 Gr 表面上。提出 PtSe/Au 的强相互作用和 Gr/Au 的空间限制效应的协同作用是必要的机制。特别地,这种独特的生长体系使我们能够使用扫描隧道显微镜/光谱法揭示 1L-PtSe 的固有性质和界面耦合效应。我们的工作应该能够在基于 2D 的垂直异质结构的合成以及它们内在界面性质的探索方面取得重大进展。

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