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不同放射敏感性的人宫颈癌细胞系中DNA双链断裂的诱导与重新连接

Induction and rejoining of DNA double-strand breaks in human cervix carcinoma cell lines of differing radiosensitivity.

作者信息

Kelland L R, Edwards S M, Steel G G

机构信息

Radiotherapy Research Unit, Institute of Cancer Research, Sutton, Surrey, United Kingdom.

出版信息

Radiat Res. 1988 Dec;116(3):526-38.

PMID:3205912
Abstract

Five recently established cell lines of human carcinoma of the cervix of varying radiosensitivity have been used to determine whether the induction or rejoining of DNA double-strand breaks (dsb) shows any correlation with radiosensitivity or radiation recovery capacity. Double-strand DNA breaks have been measured using neutral filter elution at pH 9.6. The number of breaks induced immediately after irradiation with doses of 10 to 40 Gy 60Co gamma rays appeared to show some correlation with radiosensitivity particularly after 10 Gy; the two more radiosensitive lines incurred more breaks than the more radioresistant lines. In addition, the shape of the induction curve with dose was linear for the two sensitive lines but curvilinear for the resistant lines. Despite the dose scales being different, this mirrored their respective cell survival curve shapes. After 30 or 50 Gy irradiation, rejoining of breaks appeared to be rapid and almost complete within 60 min at 37 degrees C for the three resistant lines. However, for the sensitive lines, one line (HX160c) in particular exhibited a reduced rate of dsb rejoining. In addition, a residual level of dsb was present in this line even after allowing rejoining for 3 h. While induction and rejoining of DNA dsb therefore appears to be a factor in determining radiosensitivity, at doses relevant to cellular survival (up to 10 Gy), the greater induction of DNA dsb in radiosensitive lines may play a significant role in determining the cellular response to ionizing radiation.

摘要

利用最近建立的5种对辐射敏感性不同的人宫颈癌细胞系,来确定DNA双链断裂(dsb)的诱导或重新连接是否与辐射敏感性或辐射恢复能力存在任何相关性。使用pH 9.6的中性滤膜洗脱法测量双链DNA断裂。用10至40 Gy的60Coγ射线照射后立即诱导产生的断裂数量似乎与辐射敏感性存在一定相关性,尤其是在10 Gy照射后;两个辐射敏感性较高的细胞系产生的断裂比辐射抗性较强的细胞系更多。此外,两个敏感细胞系的断裂诱导曲线与剂量呈线性关系,而抗性细胞系呈曲线关系。尽管剂量范围不同,但这反映了它们各自的细胞存活曲线形状。对于三个抗性细胞系,在30或50 Gy照射后,断裂的重新连接在37℃下60分钟内似乎迅速且几乎完全完成。然而,对于敏感细胞系,特别是一个细胞系(HX160c)表现出dsb重新连接速率降低。此外,即使在重新连接3小时后,该细胞系中仍存在dsb的残留水平。因此,虽然DNA dsb的诱导和重新连接似乎是决定辐射敏感性的一个因素,但在与细胞存活相关的剂量(高达10 Gy)下,辐射敏感细胞系中DNA dsb的更大诱导可能在决定细胞对电离辐射的反应中起重要作用。

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