Qazi M J, Salim H, Doorman C A W, Jambon-Puillet E, Shahidzadeh N
Institute of Physics, University of Amsterdam, Science Park 904, 1098 XH, Amsterdam, Netherlands.
Sci Adv. 2019 Dec 20;5(12):eaax1853. doi: 10.1126/sciadv.aax1853. eCollection 2019 Dec.
Salt creeping is a ubiquitous phenomenon in which crystals precipitate far from an evaporating salt solution boundary, which constitutes a major problem in outdoor electronics, civil engineering, artworks, and agriculture. We report a novel experimental approach that allows to quantitatively describe the creeping mechanism and demonstrate its universality with respect to different salts. We show that there exists a critical contact angle below which salt creeping occurs, provided also the nucleation of multiple crystals is favored. The precipitation of new crystals happens ahead of the contact line by the meniscus that progressively advances over the crystals forming also nanometric precursor films. This enlarges the evaporative area, causing an exponential increase in the crystal mass in time. The self-amplifying process then results in a spectacular three-dimensional crystal network at macroscopic distances from the solution reservoir. These findings also allow us to control the creeping by using crystallization modifiers.
盐析是一种普遍存在的现象,即晶体在远离蒸发盐溶液边界的地方沉淀,这在户外电子产品、土木工程、艺术品和农业中构成了一个主要问题。我们报告了一种新颖的实验方法,该方法能够定量描述盐析机制,并证明其对于不同盐类的普遍性。我们表明,存在一个临界接触角,低于该角度时会发生盐析,前提是多晶体的成核受到促进。新晶体的沉淀通过弯月面在接触线之前发生,弯月面逐渐在晶体上推进,同时形成纳米级前驱膜。这扩大了蒸发面积,导致晶体质量随时间呈指数增长。然后,这种自放大过程在距溶液储液器宏观距离处形成壮观的三维晶体网络。这些发现还使我们能够通过使用结晶改性剂来控制盐析。