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具有倾斜单轴磁各向异性的相邻窄薄膜条带的磁畴转变

Magnetic Domain Transition of Adjacent Narrow Thin Film Strips with Inclined Uniaxial Magnetic Anisotropy.

作者信息

Nakai Tomoo

机构信息

Industrial Technology Institute, Miyagi Prefectural Government, 2-2 Akedori, Aoba-ku, Sendai-city, Miyagi 981-3206, Japan.

出版信息

Micromachines (Basel). 2020 Mar 8;11(3):279. doi: 10.3390/mi11030279.

Abstract

This study deals a phenomenon of magnetic domain transition for the stepped magneto-impedance element. Our previous research shows that an element with 70° inclined easy axis has a typical characteristic of the domain transition, and the transition can be controlled by the normal magnetic field. In this paper, we apply this phenomenon and controlling method to the line arrangement adjacent to many body elements, in which mutual magnetic interaction exists. The result shows that the hidden inclined Landau-Lifshitz domain appears by applying a distributed normal field the same as an individual element.

摘要

本研究探讨了阶梯式磁阻抗元件的磁畴转变现象。我们之前的研究表明,易轴倾斜70°的元件具有典型的磁畴转变特性,且该转变可由法向磁场控制。在本文中,我们将此现象及控制方法应用于存在相互磁相互作用的多个体元件相邻的线排列中。结果表明,通过施加与单个元件相同的分布式法向磁场,会出现隐藏的倾斜朗道-里夫希茨磁畴。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a9fe/7142722/e0267d44f973/micromachines-11-00279-g001.jpg

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