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硅中受共振驱动的单重态-三重态自旋量子比特

Resonantly Driven Singlet-Triplet Spin Qubit in Silicon.

作者信息

Takeda K, Noiri A, Yoneda J, Nakajima T, Tarucha S

机构信息

Center for Emergent Matter Science (CEMS), RIKEN, Wako-shi, Saitama 351-0198, Japan.

出版信息

Phys Rev Lett. 2020 Mar 20;124(11):117701. doi: 10.1103/PhysRevLett.124.117701.

Abstract

We report implementation of a resonantly driven singlet-triplet spin qubit in silicon. The qubit is defined by the two-electron antiparallel spin states and universal quantum control is provided through a resonant drive of the exchange interaction at the qubit frequency. The qubit exhibits long T_{2}^{*} exceeding 1  μs that is limited by dephasing due to the ^{29}Si nuclei rather than charge noise thanks to the symmetric operation and a large micromagnet Zeeman field gradient. The randomized benchmarking shows 99.6% single gate fidelity which is the highest reported for singlet-triplet qubits.

摘要

我们报告了在硅中实现共振驱动的单重态-三重态自旋量子比特。该量子比特由两个电子的反平行自旋态定义,并且通过在量子比特频率下对交换相互作用的共振驱动来提供通用量子控制。该量子比特表现出超过1 μs的长T₂*,这受到²⁹Si核引起的退相限制,而非电荷噪声限制,这得益于对称操作和大的微磁体塞曼场梯度。随机基准测试显示单门保真度为99.6%,这是单重态-三重态量子比特所报道的最高值。

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