Luo Heng, Li Chen, Deng Lianwen, Li Yang, Xiao Peng, Zhang Haibin
School of Physics and Electronics, Central South University, Changsha 410083, China.
State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China.
Materials (Basel). 2020 Mar 20;13(6):1428. doi: 10.3390/ma13061428.
In situ grown CNTi and SiC, which derived from non-oxide additives TiSiC, are proposed to densify silicon nitride (SiN) ceramics with enhanced mechanical performance via hot-press sintering. Remarkable increase of density from 79.20% to 95.48% could be achieved for SiN ceramics with 5 vol.% TiSiC when sintered at 1600 °C. As expected, higher sintering temperature 1700 °C could further promote densification of SiN ceramics filled with TiSiC. The capillarity of decomposed Si from TiSiC, and in situ reaction between nonstoichiometric TiC and SiN were believed to be responsible for densification of SiN ceramics. An obvious enhancement of flexural strength and fracture toughness for SiN with vol.% TiSiC ( = 1~20) ceramics was observed. The maximum flexural strength of 795 MPa for SiN composites with 5 vol.% TiSiC and maximum fracture toughness of 6.97 MPa·m for SiN composites with 20 vol.% TiSiC are achieved via hot-press sintering at 1700 °C. Pull out of elongated SiN grains, crack bridging, crack branching and crack deflection were demonstrated to dominate enhance fracture toughness of SiN composites.
原位生长的碳氮化钛(CNTi)和碳化硅(SiC)源自非氧化物添加剂TiSiC,通过热压烧结用于致密化氮化硅(SiN)陶瓷,以提高其机械性能。当在1600℃烧结时,含5 vol.% TiSiC的SiN陶瓷密度可从79.20%显著提高到95.48%。正如预期的那样,更高的烧结温度1700℃可进一步促进填充TiSiC的SiN陶瓷的致密化。认为TiSiC分解产生的硅的毛细作用以及非化学计量比的TiC与SiN之间的原位反应是SiN陶瓷致密化的原因。观察到含不同体积分数TiSiC( = 1~20)的SiN陶瓷的抗弯强度和断裂韧性有明显提高。通过在1700℃热压烧结,含5 vol.% TiSiC的SiN复合材料的最大抗弯强度达到795 MPa,含20 vol.% TiSiC的SiN复合材料的最大断裂韧性达到6.97 MPa·m。拔出拉长的SiN晶粒、裂纹桥接、裂纹分支和裂纹偏转被证明是提高SiN复合材料断裂韧性的主要因素。