Langenberg Eric, Paik Hanjong, Smith Eva H, Nair Hari P, Hanke Isabelle, Ganschow Steffen, Catalan Gustau, Domingo Neus, Schlom Darrell G
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States.
Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany.
ACS Appl Mater Interfaces. 2020 May 6;12(18):20691-20703. doi: 10.1021/acsami.0c04381. Epub 2020 Apr 24.
We study the interplay between epitaxial strain, film thickness, and electric field in the creation, modification, and design of distinct ferroelastic structures in PbTiO thin films. Strain and thickness greatly affect the structures formed, providing a two-variable parameterization of the resulting self-assembly. Under applied electric fields, these strain-engineered ferroelastic structures are highly malleable, especially when / and / superdomains coexist. To reconfigure the ferroelastic structures and achieve self-assembled nanoscale-ordered morphologies, pure ferroelectric switching of individual -domains within the / superdomains is essential. The stability, however, of the electrically written ferroelastic structures is in most cases ephemeral; the speed of the relaxation process depends sensitively on strain and thickness. Only under low tensile strain-as is the case for PbTiO on GdScO-and below a critical thickness do the electrically created / superdomain structures become stable for days or longer, making them relevant for reconfigurable nanoscale electronics or nonvolatile electromechanical applications.
我们研究了外延应变、薄膜厚度和电场在PbTiO薄膜中不同铁弹性结构的形成、改性和设计过程中的相互作用。应变和厚度对所形成的结构有很大影响,为所得的自组装提供了双变量参数化。在施加电场的情况下,这些应变工程化的铁弹性结构具有高度的延展性,尤其是当/和/超畴共存时。为了重新配置铁弹性结构并实现自组装的纳米级有序形态,/超畴内单个畴的纯铁电切换至关重要。然而,在大多数情况下,电写入的铁弹性结构的稳定性是短暂的;弛豫过程的速度敏感地取决于应变和厚度。只有在低拉伸应变下(如GdScO上的PbTiO的情况)且低于临界厚度时,电创建的/超畴结构才会稳定数天或更长时间,这使其适用于可重构纳米级电子器件或非易失性机电应用。