Wang Jianming, Yu Huangzhong, Hou Chunli, Zhang Jiang
School of Physics and Optoelectronics, South China University of Technology, 510640 Guangzhou, China.
School of Materials Science & Engineering, South China University of Technology, 510640 Guangzhou, China.
ACS Appl Mater Interfaces. 2020 Jun 10;12(23):26543-26554. doi: 10.1021/acsami.0c02489. Epub 2020 May 28.
Two-dimensional (2D) nanosheets have attracted significant attention in photovoltaic devices in recent years owing to their outstanding photoelectric properties. Herein, 2D α-InSe nanosheets with high conductivity and suitable work function are synthesized by liquid-phase exfoliation method. To ameliorate the low conductivity of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) (2.21 × 10 S cm), α-InSe nanosheets are directly added into PEDOT:PSS to obtain the PEDOT:PSS:α-InSe composite film. The composite film exhibits excellent optical transmittance, suitable work function, and enhanced conductivity (1.54 × 10 S cm). To profoundly investigate the mechanism of conductivity improvement, X-ray photoelectron spectroscopy, Raman spectroscopy, electron paramagnetic resonance, and atomic force microscopy are conducted. The results show that the synergistic effect of 2D α-InSe nanosheets and isopropyl alcohol/deionized water cosolvent screens the Coulombic attraction among PEDOT and PSS. The screening effect results in the partial removal of PSS and the benzoid-quinoid transition of PEDOT. In addition, α-InSe nanosheets may serve as physical linkers for PEDOT chains. Both these effects are beneficial to increase the interfacial contact area between PEDOT chains and form a larger conductive network of PEDOT, leading to an enhanced conductivity. The composite film is first employed as a hole transport layer (HTL) in polymer solar cells (PSCs). The power conversion efficiency (PCE) of the poly[2,6-(4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-:4,5-']dithiophene)--(1,3-di(5-thiophene-2-yl)-5,7-bis(2-ethylhexyl)benzo[1,2-:4,5-']dithiophene-4,8-dione)] (PBDB-T):3,9-bis(2-methylene(3-(1,1-dicyanomethylene)-indanone))-5,5,11,11-tetrakis(4-hexylphenyl)dithieno-[2,3-:2',3'-']--indaceno[1,2-b:5,6-']dithiophene (ITIC)-based device with composite HTL is 10% higher than that of the unmodified PBDB-T:ITIC-based device, and the maximum PCE of 15.89% is achieved in the (poly[(2,6-(4,8-bis(5-(2-ethylhexyl)-4-fluorothiophen-2-yl)benzo[1,2-:4,5-']dithiophene))--(1,3-di(5-thiophene-2-yl)-5,7-bis(2-ethylhexyl)-benzo[1,2-:4,5-']dithiophene-4,8-dione))] (PM6):(2,2'-((2,2)-((12,13-bis(2-ethylhexyl)-3,9-diundecyl-12,13-dihydro-[1,2,5]thiadiazolo[3,4-]thieno[2,″3″:4',50]thieno[2',3':4,5]pyrrolo[3,2-]thieno[2',3':4,5]thieno[3,2-]indole-2,10-diyl)bis(methanylylidene))bis(5,6-difluoro-3-oxo-2,3-dihydro-1-indene-2,1-diylidene))dimalononitrile) (Y6) system. More interestingly, the stability of devices with composite HTL is improved owing to the partial removal of PSS. Thus, the PEDOT:PSS:α-InSe composite can be a potential HTL material in PSCs.
近年来,二维(2D)纳米片因其优异的光电性能在光电器件中受到了广泛关注。在此,通过液相剥离法合成了具有高导电性和合适功函数的二维α-InSe纳米片。为了改善聚(3,4-乙撑二氧噻吩):聚(苯乙烯磺酸盐)(PEDOT:PSS)(2.21×10 S cm)的低导电性,将α-InSe纳米片直接添加到PEDOT:PSS中以获得PEDOT:PSS:α-InSe复合薄膜。该复合薄膜表现出优异的光学透过率、合适的功函数和增强的导电性(1.54×10 S cm)。为了深入研究导电性提高的机制,进行了X射线光电子能谱、拉曼光谱、电子顺磁共振和原子力显微镜研究。结果表明,二维α-InSe纳米片与异丙醇/去离子水共溶剂的协同作用屏蔽了PEDOT和PSS之间的库仑吸引力。这种屏蔽效应导致PSS的部分去除以及PEDOT的苯型-醌型转变。此外,α-InSe纳米片可作为PEDOT链的物理连接体。这两种效应都有利于增加PEDOT链之间的界面接触面积并形成更大的PEDOT导电网络,从而提高导电性。该复合薄膜首次被用作聚合物太阳能电池(PSC)中的空穴传输层(HTL)。具有复合HTL的聚[2,6-(4,8-双(5-(2-乙基己基)噻吩-2-基)苯并[1,2-:4,5-']二噻吩)-(1,3-二(5-噻吩-2-基)-5,7-双(2-乙基己基)苯并[1,2-:4,5-']二噻吩-4,8-二酮)](PBDB-T):3,9-双(2-亚甲基(3-(1,1-二氰基亚甲基)-茚满酮))-5,5,11,11-四(4-己基苯基)二噻吩并-[2,3-:2',3'-']-茚并[1,2-b:5,6-']二噻吩(ITIC)基器件的功率转换效率(PCE)比未改性的PBDB-T:ITIC基器件高10%,并且在(聚[(2,6-(4,8-双(5-(2-乙基己基)-4-氟噻吩-2-基)苯并[1,2-:4,5-']二噻吩))-(1,3-二(5-噻吩-2-基)-5,7-双(2-乙基己基)-苯并[1,2-:4,5-']二噻吩-4,8-二酮)](PM6):(2,2'-((2,2)-((12,13-双(2-乙基己基)-3,9-二十一烷基-12,13-二氢-[1,2,5]噻二唑并[3,4-]噻吩并[2,″3″:4',50]噻吩并[2',3':4,5]吡咯并[3,2-]噻吩并[2',3':4,5]噻吩并[3,2-]吲哚-2,10-二基)双(亚甲基))双(5,6-二氟-3-氧代-2,3-二氢-1-茚-2,1-二亚基))二丙二腈)(Y6)体系中实现了15.89%的最大PCE。更有趣的是,由于PSS的部分去除,具有复合HTL的器件的稳定性得到了提高。因此,PEDOT:PSS:α-InSe复合材料可以成为PSC中潜在的HTL材料。