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用于热电应用的基于RuV的半赫斯勒半导体的输运性质:一项计算研究。

Transport properties of RuV-based half-Heusler semiconductors for thermoelectric applications: a computational study.

作者信息

Sharma Sunil Kumar, Ahmed Sameh S

机构信息

Department of Physics, School of Applied Sciences, University of Science and Technology, Meghalaya-793101, India.

出版信息

J Phys Condens Matter. 2020 May 27;32(40):405501. doi: 10.1088/1361-648X/ab96f0.

Abstract

A systematic study of electronic structure, mechanical and transport properties of RuV-based half-Heusler alloys (RuVZ, Z = As, P, Sb) have been presented using ab initio density functional and Boltzmann transport theory. The electronic structures are obtained using generalized gradient approximation with Perdew-Burke-Ernzerhof functional. All the compounds are crystallized in face centered cubic phase with space group #216. Our preliminary electronic structure simulations reveal that all the alloys are non-magnetic semiconductors. Additionally, the phonon dispersion and elastic constants (along with the related elastic moduli) also verify mechanical stability of the alloys. Due to strong dependence on the electronic bandgap in thermoelectric materials, we have estimated bandgap using more accurate hybrid functional i.e. Heyd-Scuseria-Ernzerhof. The transport coefficients (e.g. Seebeck, electrical conductivity, thermal conductivity due to electrons) are calculated by solving the Boltzmann transport equation for charge carriers as implemented in BoltzTraP software under constant relaxation time approximation. The lattice thermal conductivity due to phonons is calculated using more reliable shengBTE code based upon the Boltzmann transport equation for phonons. We have calculated the more reliable value of the thermoelectric figure of merit, ZT (related to the conversion efficiency) for all the compounds. The obtained ZT for RuVAs, RuVP and RuVSb is 0.41(0.32), 0.21(0.16) and 0.70(0.61) for p(n)-type behavior at 900 K. The corresponding carrier concentrations are also predicted. High value of ZT is obtained for RuVSb alloy due to low lattice thermal conductivity. Among these compounds, RuVSb emerged out as a most suitable candidate for thermoelectric power generation device. Minimum lattice thermal conductivity in theoretical limit along with the corresponding maximum value of ZT is also predicted in these alloys.

摘要

利用从头算密度泛函和玻尔兹曼输运理论,对基于RuV的半赫斯勒合金(RuVZ,Z = As、P、Sb)的电子结构、力学和输运性质进行了系统研究。电子结构采用广义梯度近似和Perdew-Burke-Ernzerhof泛函获得。所有化合物均结晶为面心立方相,空间群为#216。我们初步的电子结构模拟表明,所有合金都是非磁性半导体。此外,声子色散和弹性常数(以及相关的弹性模量)也验证了合金的力学稳定性。由于热电材料对电子带隙的强烈依赖性,我们使用更精确的杂化泛函即Heyd-Scuseria-Ernzerhof来估计带隙。输运系数(例如塞贝克系数、电导率、电子引起的热导率)通过在恒定弛豫时间近似下求解BoltzTraP软件中实现的电荷载流子的玻尔兹曼输运方程来计算。声子引起的晶格热导率使用基于声子玻尔兹曼输运方程的更可靠的shengBTE代码来计算。我们计算了所有化合物更可靠的热电优值ZT(与转换效率相关)值。对于RuVAs、RuVP和RuVSb,在900 K时p(n)型行为的ZT值分别为0.41(0.32)、0.21(0.16)和0.70(0.61)。还预测了相应的载流子浓度。由于低晶格热导率,RuVSb合金获得了较高的ZT值。在这些化合物中,RuVSb成为热电发电装置最合适的候选材料。还预测了这些合金在理论极限下的最小晶格热导率以及相应的最大ZT值。

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