Lai Chin Wei, Samsudin Nurul Asma, Low Foo Wah, Abd Samad Nur Azimah, Lau Kung Shiuh, Chou Pui May, Tiong Sieh Kiong, Amin Nowshad
Level 3, Block A, Nanotechnology & Catalysis Research Centre (NANOCAT), Institute for Advanced Studies (IAS), University of Malaya, Kuala Lumpur 50603, Malaysia.
Institute of Sustainable Energy (ISE), Universiti Tenaga Nasional (The Energy University), Jalan IKRAM-UNITEN, Kajang 43000, Selangor, Malaysia.
Materials (Basel). 2020 Jun 3;13(11):2533. doi: 10.3390/ma13112533.
In this present work, we report the deposition of cadmium selenide (CdSe) particles on titanium dioxide (TiO) nanotube thin films, using the chemical bath deposition (CBD) method at low deposition temperatures ranging from 20 to 60 °C. The deposition temperature had an influence on the overall CdSe-TiO nanotube thin film morphologies, chemical composition, phase transition, and optical properties, which, in turn, influenced the photoelectrochemical performance of the samples that were investigated. All samples showed the presence of CdSe particles in the TiO nanotube thin film lattice structures with the cubic phase CdSe compound. The amount of CdSe loading on the TiO nanotube thin films were increased and tended to form agglomerates as a function of deposition temperature. Interestingly, a significant enhancement in photocurrent density was observed for the CdSe-TiO nanotube thin films deposited at 20 °C with a photocurrent density of 1.70 mA cm, which was 17% higher than the bare TiO nanotube thin films. This sample showed a clear surface morphology without any clogged nanotubes, leading to better ion diffusion, and, thus, an enhanced photocurrent density. Despite having the least CdSe loading on the TiO nanotube thin films, the CdSe-TiO nanotube thin films deposited at 20 °C showed the highest photocurrent density, which confirmed that a small amount of CdSe is enough to enhance the photoelectrochemical performance of the sample.
在本研究中,我们报道了采用化学浴沉积(CBD)法在20至60°C的低沉积温度下,将硒化镉(CdSe)颗粒沉积在二氧化钛(TiO₂)纳米管薄膜上。沉积温度对CdSe-TiO₂纳米管薄膜的整体形貌、化学成分、相变和光学性质有影响,进而影响了所研究样品的光电化学性能。所有样品在TiO₂纳米管薄膜晶格结构中均显示出立方相CdSe化合物的CdSe颗粒。TiO₂纳米管薄膜上CdSe的负载量随沉积温度的升高而增加,并趋于形成团聚体。有趣的是,在20°C下沉积的CdSe-TiO₂纳米管薄膜的光电流密度显著增强,光电流密度为1.70 mA/cm²,比裸TiO₂纳米管薄膜高17%。该样品显示出清晰的表面形貌,没有任何堵塞的纳米管,从而导致更好的离子扩散,进而提高了光电流密度。尽管TiO₂纳米管薄膜上的CdSe负载量最少,但在20°C下沉积的CdSe-TiO₂纳米管薄膜显示出最高的光电流密度,这证实了少量的CdSe就足以提高样品的光电化学性能。