Zhou Jinjie, Liu Youquan, Wu Hongping, Yu Hongwei, Lin Zheshuai, Hu Zhanggui, Wang Jiyang, Wu Yicheng
Tianjin Key Laboratory of Functional Crystal Materials, Institute of Functional Crystal, Tianjin University of Technology, Tianjin, 300384, China.
Beijing Center for Crystal R&D, Key Lab of Functional Crystals and Laser Technology of, Chinese Academy of Sciences, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
Angew Chem Int Ed Engl. 2020 Oct 19;59(43):19006-19010. doi: 10.1002/anie.202008346. Epub 2020 Aug 24.
Designing deep-ultraviolet (DUV) nonlinear-optical (NLO) crystals is one of the major current research interests, but it faces a great challenge. In order to overcome the problem of crystal growth and the toxicity of BeO raw materials in KBe BO F (KBBF), the only applicable DUV NLO crystal so far, we substitute Be cations with Zn in the KBBF structure and modify the halogen anions, by which three new Zn-containing KBBF-like compounds, CsZn BO X (X =F , Cl , and FCl), have been successfully synthesized. They all exhibit excellent NLO properties, including improved SHG responses (2.8-3.5×KDP) and short UV cut-off edges (<190 nm). In comparison with KBBF, CsZn BO X (X =F , Cl , and FCl) are all chemically benign and have better growth habits, so they are all promising as DUV NLO crystals. Further study on structure-property relationships indicates that the mixing of halogen anions is a feasible strategy to enhance the SHG responses of the KBBF family.
设计深紫外(DUV)非线性光学(NLO)晶体是当前主要的研究热点之一,但面临巨大挑战。为克服目前唯一适用的DUV NLO晶体KBeBOF(KBBF)中晶体生长问题及BeO原料的毒性,我们在KBBF结构中用Zn取代Be阳离子并修饰卤素阴离子,成功合成了三种新型含Zn的类KBBF化合物CsZnBO X(X = F、Cl和FCl)。它们均表现出优异的NLO性能,包括增强的倍频响应(2.8 - 3.5×KDP)和短的紫外截止边(<190 nm)。与KBBF相比,CsZnBO X(X = F、Cl和FCl)均具有化学稳定性且生长习性更佳,因此作为DUV NLO晶体均具有潜力。对结构 - 性能关系的进一步研究表明,卤素阴离子的混合是增强KBBF家族倍频响应的可行策略。