Calò Pietro Antonio Paolo, Petrignani Savino, Di Gioia Michele, Marzocca Cristoforo
Department of Electrical and Information Engineering, Politecnico di Bari, via E. Orabona 4, I-70125 Bari, Italy.
Sensors (Basel). 2020 Aug 8;20(16):4428. doi: 10.3390/s20164428.
Full exploitation of the intrinsic fast timing capabilities of analog silicon photomultipliers (SiPMs) requires suitable front-end electronics. Even a parasitic inductance of a few nH, associated to the interconnections between the SiPM and the preamplifier, can significantly degrade the steepness of the detector response, thus compromising the timing accuracy. In this work, we propose a simple analytic expression for the single-photon response of a SiPM coupled to the front-end electronics, as a function of the main parameters of the detector and the preamplifier, taking into account the parasitic inductance. The model is useful to evaluate the influence of each parameter of the system on the slope of its response and to guide the designer in the definition of the architecture and the specifications for the front-end electronics. The results provided by the model have been successfully compared with experimental measurements from a front-end circuit with variable configuration based on a bipolar junction transistor (BJT), coupled to a 3 × 3 mm SiPM stimulated by a fast-pulsed laser source.
要充分利用模拟硅光电倍增管(SiPM)固有的快速计时能力,需要合适的前端电子设备。即使是与SiPM和前置放大器之间的互连相关的几纳亨的寄生电感,也会显著降低探测器响应的陡度,从而影响计时精度。在这项工作中,我们考虑了寄生电感,提出了一个简单的解析表达式,用于描述与前端电子设备耦合的SiPM的单光子响应,该表达式是探测器和前置放大器主要参数的函数。该模型有助于评估系统各参数对其响应斜率的影响,并指导设计者定义前端电子设备的架构和规格。该模型提供的结果已成功与基于双极结型晶体管(BJT)的可变配置前端电路的实验测量结果进行了比较,该前端电路与由快速脉冲激光源激发的3×3 mm SiPM耦合。