Chudzinski P
School of Mathematics and Physics, Queen's University Belfast, Belfast, UK.
Proc Math Phys Eng Sci. 2020 Jul;476(2239):20200088. doi: 10.1098/rspa.2020.0088. Epub 2020 Jul 15.
Topological insulators are frequently also one of the best-known thermoelectric materials. It has been recently discovered that in three-dimensional (3D) topological insulators each skew dislocation can host a pair of one-dimensional (1D) topological states-a helical Tomonaga-Luttinger liquid (TLL). We derive exact analytical formulae for thermoelectric Seebeck coefficient in TLL and investigate up to what extent one can ascribe the outstanding thermoelectric properties of BiTe to these 1D topological states. To this end we take a model of a dense dislocation network and find an analytic formula for an overlap between 1D (the TLL) and 3D electronic states. Our study is applicable to a weakly -doped BiTe but also to a broader class of nano-structured materials with artificially created 1D systems. Furthermore, our results can be used at finite frequency settings, e.g. to capture transport activated by photo-excitations.
拓扑绝缘体通常也是最著名的热电材料之一。最近发现,在三维(3D)拓扑绝缘体中,每个位错都可以容纳一对一维(1D)拓扑态——一种螺旋型的汤川-卢廷格液体(TLL)。我们推导了TLL中热电塞贝克系数的精确解析公式,并研究了在多大程度上可以将BiTe出色的热电性能归因于这些1D拓扑态。为此,我们采用了一个密集位错网络模型,并找到了1D(TLL)和3D电子态之间重叠的解析公式。我们的研究不仅适用于弱掺杂的BiTe,也适用于更广泛的一类具有人工创建的1D系统的纳米结构材料。此外,我们的结果可用于有限频率设置,例如用于捕获光激发激活的输运。