Fang Yu-Qiang, Chen Wei, Ao Tian-Hong, Liu Cong, Wang Li, Gao Xin-Jiang, Zhang Jun, Pan Jian-Wei
Hefei National Laboratory for Physical Sciences at the Microscale and Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China.
China Electronics Technology Group Corporation No. 44 Research Institute, Chongqing 400060, China.
Rev Sci Instrum. 2020 Aug 1;91(8):083102. doi: 10.1063/5.0014123.
InGaAs/InP single-photon detectors (SPDs) are widely used for near-infrared photon counting in practical applications. Photon detection efficiency (PDE) is one of the most important parameters for SPD characterization, and therefore, increasing PDE consistently plays a central role in both industrial development and academic research. Here, we present the implementation of high-frequency gating InGaAs/InP SPDs with a PDE as high as 60% at 1550 nm. On one hand, we optimize the structure design and device fabrication of InGaAs/InP single-photon avalanche diodes with an additional dielectric-metal reflection layer to relatively increase the absorption efficiency of incident photons by ∼20%. On the other hand, we develop a monolithic readout circuit of weak avalanche extraction to minimize the parasitic capacitance for the suppression of the afterpulsing effect. With 1.25 GHz sine wave gating and optimized gate amplitude and operation temperature, the SPD is characterized to reach a PDE of 60% with a dark count rate (DCR) of 340 kcps. For practical use, given 3 kcps DCR as a reference, the PDE reaches ∼40% PDE with an afterpulse probability of 5.5%, which can significantly improve the performance for the near-infrared SPD-based applications.
铟镓砷/磷化铟单光子探测器（SPD）在实际应用中被广泛用于近红外光子计数。光子探测效率（PDE）是表征SPD的最重要参数之一，因此，持续提高PDE在工业发展和学术研究中都起着核心作用。在此，我们展示了高频选通铟镓砷/磷化铟SPD的实现，其在1550纳米处的PDE高达60%。一方面，我们优化了铟镓砷/磷化铟单光子雪崩二极管的结构设计和器件制造，增加了一个介质-金属反射层，以相对提高入射光子的吸收效率约20%。另一方面，我们开发了一种弱雪崩提取的单片读出电路，以最小化寄生电容，从而抑制后脉冲效应。通过1.25吉赫兹正弦波选通以及优化的选通幅度和工作温度，该SPD的特征是达到60%的PDE，暗计数率（DCR）为340千次每秒。在实际应用中，以3千次每秒的DCR为参考，PDE达到约40%，后脉冲概率为5.5%，这可以显著提高基于近红外SPD的应用性能。
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