Tsarev Andrei, Passaro Vittorio M N
Laboratory of Optical Materials and Structures, Rzhanov Institute of Semiconductor Physics, SB RAS, 630090 Novosibirsk, Russia.
Laboratory of Semiconductor and Dielectric Materials, Physics Department, Novosibirsk State University, 630090 Novosibirsk, Russia.
Sensors (Basel). 2020 Sep 16;20(18):5306. doi: 10.3390/s20185306.
This paper presents results of numerical modeling of a modified design of an optical sensor based on segmented periodic silicon oxynitride (SiON) grating evanescently coupled with silicon wire. This segmented grating works as a leaky waveguide, which filters input power from a broadband optical source and radiates it as an outcoming optical beam with both a small wavelength band and a small beam divergence. The radiation angle strongly depends on the refractive index of the grating environment and provides sensor interrogation by measuring the far field pattern in the focal plane of the lens, which is placed near the sensor element. The device concept was verified by direct numerical modeling through the finite difference time domain (FDTD) method and provided moderate intrinsic limit of detection (iLOD) ~ 0.004 RIU with a possible iLOD ~ 0.001 RIU for 10 mm-long structures.
本文介绍了一种基于分段周期性氮氧化硅(SiON)光栅与硅线倏逝耦合的光学传感器改进设计的数值模拟结果。这种分段光栅用作泄漏波导,它从宽带光源过滤输入功率,并将其辐射为具有小波长带和小光束发散角的出射光束。辐射角强烈依赖于光栅环境的折射率,并通过测量放置在传感器元件附近的透镜焦平面中的远场图案来实现传感器询问。通过有限差分时域(FDTD)方法进行直接数值模拟验证了该器件概念,对于10毫米长的结构,提供了约0.004 RIU的适度固有检测限(iLOD),可能的iLOD约为0.001 RIU。